ECH8659-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transistor Application :

SWITCHING

Additional Feature :

ESD PROTECTED

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

7A

Drain-source On Resistance-Max :

0.024Ohm

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Published :

2017

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1.3W

Pbfree Code :

yes

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V

JESD-30 Code :

R-XDSO-F8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SMD, Flat Lead

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e6

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

40A

Max Power Dissipation :

1.3W

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

7A

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Factory Lead Time :

23 Weeks

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Feature :

Logic Level Gate, 4V Drive

Rds On (Max) @ Id, Vgs :

24m Ω @ 3.5A, 10V