ECH8601M-C-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

1.8 μs

Power Dissipation :

1.6W

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Published :

2012

Package / Case :

8-SMD, Flat Lead

Drain to Source Voltage (Vdss) :

24V

Max Power Dissipation :

1.5W

FET Type :

2 N-Channel (Dual) Common Drain

Turn-Off Delay Time :

3 μs

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate, 2.5V Drive

Number of Pins :

8

Drain to Source Breakdown Voltage :

24V

Radiation Hardening :

No

Rise Time :

1μs

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

8A

Mounting Type :

Surface Mount

Turn On Delay Time :

300 ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 4A, 4.5V

Mount :

Surface Mount