ECH8502-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

5A

Radiation Hardening :

No

Configuration :

SEPARATE, 2 ELEMENTS

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

13 Weeks

Halogen Free :

Halogen Free

Transistor Type :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Package / Case :

8-SMD, Flat Lead

Voltage - Collector Emitter Breakdown (Max) :

100V 50V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

200

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Max Power Dissipation :

1.6W

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Surface Mount :

yes

Frequency - Transition :

290MHz

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

8

Vce Saturation (Max) @ Ib, Ic :

120mV @ 125mA, 2.5A

Number of Pins :

8

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Collector Base Voltage (VCBO) :

100V

Polarity :

NPN, PNP

Published :

2013

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Transition Frequency :

290MHz

JESD-609 Code :

e6

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.6W

Pin Count :

8