ECH8501-TL-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Collector Emitter Saturation Voltage :

-100mV

Radiation Hardening :

No

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Transistor Element Material :

SILICON

Number of Pins :

8

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Halogen Free :

Halogen Free

Collector Emitter Voltage (VCEO) :

30V

JESD-609 Code :

e6

Packaging :

Tape and Reel (TR)

Max Collector Current :

5A

hFE Min :

200

Number of Elements :

2

Collector Emitter Breakdown Voltage :

30V

Collector Base Voltage (VCBO) :

-30V

Vce Saturation (Max) @ Ib, Ic :

110mV @ 125mA, 2.5A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Transistor Type :

NPN, PNP

Power Dissipation :

1.6W

Factory Lead Time :

2 Weeks

Gain Bandwidth Product :

280MHz

ECCN Code :

EAR99

Polarity :

NPN, PNP

Element Configuration :

Dual

Lead Free :

Lead Free

Current - Collector (Ic) (Max) :

5A

Published :

2013

Max Power Dissipation :

1.6W

Transition Frequency :

280MHz

Emitter Base Voltage (VEBO) :

6V

Number of Terminations :

8

Pin Count :

8

Package / Case :

8-SMD, Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ