DZT955-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Transistor Application :

SWITCHING

Frequency :

150MHz

Length :

6.5mm

Transition Frequency :

150MHz

Height :

1.6mm

Gain Bandwidth Product :

150MHz

Max Breakdown Voltage :

140V

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

140V

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Voltage (VCEO) :

140V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-261-4, TO-261AA

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Power Dissipation :

1W

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Base Part Number :

DZT955

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

4

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

4

Mounting Type :

Surface Mount

Transistor Type :

PNP

Max Collector Current :

4A

Collector Base Voltage (VCBO) :

180V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Radiation Hardening :

No

Weight :

7.994566mg

Element Configuration :

Single

Max Power Dissipation :

1W

Width :

3.5mm