DZT955-13

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Mfr.Part #
DZT955-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 140V 4A SOT223-3
Stock
7,298
In Stock :
7,298

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
370mV @ 300mA, 3A
Transistor Application :
SWITCHING
Frequency :
150MHz
Length :
6.5mm
Transition Frequency :
150MHz
Height :
1.6mm
Gain Bandwidth Product :
150MHz
Max Breakdown Voltage :
140V
Pin Count :
4
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
6V
Collector Emitter Breakdown Voltage :
140V
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
50nA ICBO
Collector Emitter Voltage (VCEO) :
140V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Terminal Finish :
Matte Tin (Sn)
Pbfree Code :
yes
Power Dissipation :
1W
ECCN Code :
EAR99
JESD-609 Code :
e3
Terminal Form :
Gull wing
Case Connection :
COLLECTOR
Base Part Number :
DZT955
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
4
Polarity/Channel Type :
PNP
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Mount :
Surface Mount
Number of Pins :
4
Mounting Type :
Surface Mount
Transistor Type :
PNP
Max Collector Current :
4A
Collector Base Voltage (VCBO) :
180V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Radiation Hardening :
No
Weight :
7.994566mg
Element Configuration :
Single
Max Power Dissipation :
1W
Width :
3.5mm
Datasheets
DZT955-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT955-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Base Part Number:DZT955, Number of Terminations:4, Number of Pins:4, Mounting Type:Surface Mount, DZT955-13 pinout, DZT955-13 datasheet PDF, DZT955-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT955-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT955-13


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT955-13 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 1A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 140V volts.When collector current reaches its maximum, it can reach 4A volts.

DZT955-13 Features


the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


DZT955-13 Applications


There are a lot of Diodes Incorporated
DZT955-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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