DZT955-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Base Part Number :

DZT955

Max Power Dissipation :

1W

Height :

1.6mm

Width :

3.5mm

Power Dissipation :

1W

Terminal Position :

Dual

Element Configuration :

Single

Terminal Form :

Gull wing

Number of Terminations :

4

Number of Elements :

1

Max Breakdown Voltage :

140V

Radiation Hardening :

No

Package / Case :

TO-261-4, TO-261AA

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

150MHz

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

140V

Transition Frequency :

150MHz

Pin Count :

4

ECCN Code :

EAR99

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

370mV @ 300mA, 3A

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

Weight :

7.994566mg

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Frequency :

150MHz

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Base Voltage (VCBO) :

180V

Collector Emitter Breakdown Voltage :

140V

Transistor Type :

PNP

Max Collector Current :

4A

Transistor Application :

SWITCHING

Length :

6.5mm

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260