DZT953-13
- Mfr.Part #
- DZT953-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 19 Weeks
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 400mA, 4A
- Collector Emitter Saturation Voltage :
- -420mV
- Continuous Collector Current :
- -5A
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 420mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 125MHz
- Transition Frequency :
- 125MHz
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Base Part Number :
- DZT953
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- -140V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 5A
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 1W
- Pin Count :
- 4
- Polarity/Channel Type :
- PNP
- Datasheets
- DZT953-13

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT953-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -420mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 420mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DZT953-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 420mV @ 400mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 125MHz
DZT953-13 Applications
There are a lot of Diodes Incorporated
DZT953-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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