DZT953-13
- Mfr.Part #
- DZT953-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Collector Base Voltage (VCBO) :
- -140V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 1W
- Number of Pins :
- 4
- Element Configuration :
- Single
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -6V
- Continuous Collector Current :
- -5A
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 125MHz
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 400mA, 4A
- Max Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 420mV
- Factory Lead Time :
- 19 Weeks
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Pin Count :
- 4
- Base Part Number :
- DZT953
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- -420mV
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- DZT953-13

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT953-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -420mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 420mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DZT953-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 420mV @ 400mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 125MHz
DZT953-13 Applications
There are a lot of Diodes Incorporated
DZT953-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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