DZT953-13
- Mfr.Part #
- DZT953-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Continuous Collector Current :
- -5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 420mV
- Weight :
- 7.994566mg
- Collector Base Voltage (VCBO) :
- -140V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Transition Frequency :
- 125MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- -6V
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 125MHz
- Pin Count :
- 4
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Power - Max :
- 1W
- Base Part Number :
- DZT953
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 420mV @ 400mA, 4A
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 100V
- Max Collector Current :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -420mV
- Transistor Element Material :
- SILICON
- Datasheets
- DZT953-13

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT953-13 Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -420mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 420mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
DZT953-13 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 420mV @ 400mA, 4A
the emitter base voltage is kept at -6V
a transition frequency of 125MHz
DZT953-13 Applications
There are a lot of Diodes Incorporated
DZT953-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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