DZT851-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Length :

6.7mm

Transition Frequency :

130MHz

Pin Count :

4

Collector Emitter Saturation Voltage :

375mV

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

hFE Min :

25

Height :

1.65mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

DZT851

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Current - Collector Cutoff (Max) :

50nA ICBO

JESD-609 Code :

e3

Weight :

7.994566mg

Continuous Collector Current :

6A

Element Configuration :

Single

Max Power Dissipation :

1W

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

375mV @ 300mA, 6A

Factory Lead Time :

19 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

150V

Gain Bandwidth Product :

130MHz

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Frequency :

130MHz

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation :

3W

Max Breakdown Voltage :

60V

Width :

3.7mm

Max Collector Current :

6A

Packaging :

Tape and Reel (TR)