DZT851-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

7.994566mg

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 1V

Number of Terminations :

4

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1

Frequency :

130MHz

Emitter Base Voltage (VEBO) :

6V

Max Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

6A

Element Configuration :

Single

Height :

1.65mm

Polarity/Channel Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

150V

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.7mm

Transition Frequency :

130MHz

Length :

6.7mm

hFE Min :

25

Base Part Number :

DZT851

Number of Pins :

4

Power Dissipation :

3W

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

375mV

Mount :

Surface Mount

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

4

ECCN Code :

EAR99

Max Power Dissipation :

1W

Gain Bandwidth Product :

130MHz

Max Collector Current :

6A

Factory Lead Time :

19 Weeks

Current - Collector Cutoff (Max) :

50nA ICBO

Vce Saturation (Max) @ Ib, Ic :

375mV @ 300mA, 6A

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Form :

Gull wing