DZT851-13

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Mfr.Part #
DZT851-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 60V 6A SOT223-3
Stock
5,133
In Stock :
5,133

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Element Configuration :
Single
Package / Case :
TO-261-4, TO-261AA
hFE Min :
25
Polarity/Channel Type :
NPN
Transistor Application :
SWITCHING
Power Dissipation :
3W
Collector Emitter Saturation Voltage :
375mV
Number of Pins :
4
Packaging :
Tape and Reel (TR)
Gain Bandwidth Product :
130MHz
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
60V
Terminal Form :
Gull wing
Max Breakdown Voltage :
60V
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Height :
1.65mm
Frequency :
130MHz
Max Collector Current :
6A
Case Connection :
COLLECTOR
Width :
3.7mm
Pin Count :
4
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
150V
Max Power Dissipation :
1W
Number of Elements :
1
Terminal Position :
Dual
Current - Collector Cutoff (Max) :
50nA ICBO
Transition Frequency :
130MHz
Collector Emitter Voltage (VCEO) :
60V
Peak Reflow Temperature (Cel) :
260
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 1V
Continuous Collector Current :
6A
Length :
6.7mm
Base Part Number :
DZT851
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Weight :
7.994566mg
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
6V
Factory Lead Time :
19 Weeks
Vce Saturation (Max) @ Ib, Ic :
375mV @ 300mA, 6A
Terminal Finish :
Matte Tin (Sn)
Datasheets
DZT851-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT851-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, Base Part Number:DZT851, Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, DZT851-13 pinout, DZT851-13 datasheet PDF, DZT851-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT851-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT851-13


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT851-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 375mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 375mV @ 300mA, 6A.Continuous collector voltages of 6A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 130MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 6A volts.

DZT851-13 Features


the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 375mV
the vce saturation(Max) is 375mV @ 300mA, 6A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz


DZT851-13 Applications


There are a lot of Diodes Incorporated
DZT851-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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