DZT853-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Factory Lead Time :

19 Weeks

Pbfree Code :

yes

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Base Part Number :

DZT853

Peak Reflow Temperature (Cel) :

260

Weight :

7.994566mg

Element Configuration :

Single

JESD-609 Code :

e3

Max Collector Current :

6A

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

340mV @ 500mA, 5A

Height :

1.65mm

Width :

3.7mm

Frequency :

130MHz

Pin Count :

4

Continuous Collector Current :

6A

Max Power Dissipation :

1W

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

100

Polarity/Channel Type :

NPN

Number of Terminations :

4

Collector Base Voltage (VCBO) :

200V

Transition Frequency :

130MHz

Lead Free :

Lead Free

Transistor Type :

NPN

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

340mV

Power Dissipation :

3W

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

10nA ICBO

Emitter Base Voltage (VEBO) :

6V

Gain Bandwidth Product :

130MHz

Case Connection :

COLLECTOR

Number of Pins :

4

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

100V

Package / Case :

TO-261-4, TO-261AA

Max Breakdown Voltage :

100V

Length :

6.7mm