DZT658-13
- Mfr.Part #
- DZT658-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A SOT223-3
- Stock
- 1,809
- In Stock :
- 1,809
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Length :
- 6.5mm
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Frequency :
- 50MHz
- Height :
- 1.6mm
- Collector Emitter Saturation Voltage :
- 500mV
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Power Dissipation :
- 1W
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 18 Weeks
- Width :
- 3.5mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 10V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 400V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 50MHz
- Collector Base Voltage (VCBO) :
- 400V
- Base Part Number :
- DZT658
- Radiation Hardening :
- No
- Datasheets
- DZT658-13

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT658-13 Overview
This device has a DC current gain of 40 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.
DZT658-13 Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
DZT658-13 Applications
There are a lot of Diodes Incorporated
DZT658-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| DZT651-13 | Diodes Incorporated | 7,383 | TRANS NPN 60V 3A SOT223-3 |
















