DZT658-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1W

Number of Terminations :

4

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Pin Count :

4

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

400V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Element Configuration :

Single

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Frequency :

50MHz

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

400V

Base Part Number :

DZT658

Width :

3.5mm

Collector Emitter Voltage (VCEO) :

400V

Length :

6.5mm

Height :

1.6mm

Case Connection :

COLLECTOR

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

400V

Peak Reflow Temperature (Cel) :

260

Gain Bandwidth Product :

50MHz

Number of Elements :

1

Mounting Type :

Surface Mount

Transition Frequency :

50MHz

Power Dissipation :

1W

Mount :

Surface Mount

Number of Pins :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 10V

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

500mA

ECCN Code :

EAR99

Weight :

7.994566mg

Package / Case :

TO-261-4, TO-261AA