DZT658-13

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Mfr.Part #
DZT658-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 400V 0.5A SOT223-3
Stock
1,809
In Stock :
1,809

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
Gull wing
Max Collector Current :
500mA
Length :
6.5mm
Collector Emitter Breakdown Voltage :
400V
Weight :
7.994566mg
Element Configuration :
Single
Number of Terminations :
4
Frequency :
50MHz
Height :
1.6mm
Collector Emitter Saturation Voltage :
500mV
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Pin Count :
4
Power Dissipation :
1W
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
18 Weeks
Width :
3.5mm
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 10V
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Transition Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Number of Elements :
1
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Max Breakdown Voltage :
400V
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
4
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
1W
Terminal Position :
Dual
Gain Bandwidth Product :
50MHz
Collector Base Voltage (VCBO) :
400V
Base Part Number :
DZT658
Radiation Hardening :
No
Datasheets
DZT658-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT658-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Base Part Number:DZT658, DZT658-13 pinout, DZT658-13 datasheet PDF, DZT658-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT658-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT658-13


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT658-13 Overview


This device has a DC current gain of 40 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.

DZT658-13 Features


the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz


DZT658-13 Applications


There are a lot of Diodes Incorporated
DZT658-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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