DZT658-13

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Mfr.Part #
DZT658-13
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 400V 0.5A SOT223-3
Stock
1,809
In Stock :
1,809

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Base Part Number :
DZT658
Frequency :
50MHz
JESD-609 Code :
e3
Power Dissipation :
1W
Radiation Hardening :
No
Pin Count :
4
Collector Emitter Voltage (VCEO) :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
500mV
Number of Pins :
4
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Transistor Type :
NPN
Max Power Dissipation :
1W
Gain Bandwidth Product :
50MHz
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Factory Lead Time :
18 Weeks
Collector Base Voltage (VCBO) :
400V
Emitter Base Voltage (VEBO) :
5V
Max Breakdown Voltage :
400V
Polarity/Channel Type :
NPN
Package / Case :
TO-261-4, TO-261AA
Max Collector Current :
500mA
Weight :
7.994566mg
Number of Terminations :
4
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Elements :
1
Collector Emitter Breakdown Voltage :
400V
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Mount :
Surface Mount
Transition Frequency :
50MHz
Case Connection :
COLLECTOR
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Gull wing
Terminal Finish :
Matte Tin (Sn)
Length :
6.5mm
Transistor Element Material :
SILICON
Height :
1.6mm
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Transistor Application :
SWITCHING
Width :
3.5mm
Element Configuration :
Single
Datasheets
DZT658-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT658-13 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:DZT658, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, DZT658-13 pinout, DZT658-13 datasheet PDF, DZT658-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DZT658-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DZT658-13


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

DZT658-13 Overview


This device has a DC current gain of 40 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.

DZT658-13 Features


the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz


DZT658-13 Applications


There are a lot of Diodes Incorporated
DZT658-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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