DZT651-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

60V

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Transistor Type :

NPN

Number of Terminations :

4

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

TO-261-4, TO-261AA

Width :

3.5mm

ECCN Code :

EAR99

Number of Pins :

4

Height :

1.6mm

Length :

6.5mm

Factory Lead Time :

15 Weeks

Max Power Dissipation :

2W

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

60V

Power - Max :

1W

Collector Base Voltage (VCBO) :

80V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Weight :

7.994566mg

Emitter Base Voltage (VEBO) :

5V

Pin Count :

4

Collector Emitter Voltage (VCEO) :

60V

Frequency :

200MHz

Max Collector Current :

3A

Base Part Number :

DZT651

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

600mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Transition Frequency :

200MHz

Gain Bandwidth Product :

200MHz