DZT651-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

200MHz

Power - Max :

1W

Number of Elements :

1

Mount :

Surface Mount

Height :

1.6mm

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Saturation Voltage :

600mV

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

4

Power Dissipation :

2W

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Weight :

7.994566mg

Operating Temperature :

-55°C~150°C TJ

Pin Count :

4

Width :

3.5mm

Transition Frequency :

200MHz

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Gain Bandwidth Product :

200MHz

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

2W

Base Part Number :

DZT651

Collector Emitter Voltage (VCEO) :

60V

Max Collector Current :

3A

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Collector Base Voltage (VCBO) :

80V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

15 Weeks

Terminal Finish :

Matte Tin (Sn)

Length :

6.5mm

Pbfree Code :

yes

Max Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 300mA, 3A

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260