DZT651-13
- Mfr.Part #
- DZT651-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT223-3
- Stock
- 7,383
- In Stock :
- 7,383
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Base Part Number :
- DZT651
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 3A
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Length :
- 6.5mm
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 200MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.5mm
- Power Dissipation :
- 2W
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 4
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 600mV
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Height :
- 1.6mm
- Gain Bandwidth Product :
- 200MHz
- Transistor Element Material :
- SILICON
- Power - Max :
- 1W
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Max Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Datasheets
- DZT651-13

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT651-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 3A volts.
DZT651-13 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
DZT651-13 Applications
There are a lot of Diodes Incorporated
DZT651-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| DZT658-13 | Diodes Incorporated | 1,809 | TRANS NPN 400V 0.5A SOT223-3 |
















