DXT790AP5-13
- Mfr.Part #
- DXT790AP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A POWERDI5
- Stock
- 3,604
- In Stock :
- 3,604
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Package / Case :
- PowerDI™ 5
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 3.2W
- Terminal Position :
- Dual
- Base Part Number :
- DXT790
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 50V
- Weight :
- 95.991485mg
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Length :
- 4.05mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 3.2W
- Manufacturer Package Identifier :
- POWERDI-5
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 300
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -3A
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 3A
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 20nA
- Gain Bandwidth Product :
- 100MHz
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Width :
- 5.45mm
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-252
- Height :
- 1.15mm
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -170mV
- Terminal Form :
- Flat
- Datasheets
- DXT790AP5-13

PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT790AP5-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -170mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -3A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.
DXT790AP5-13 Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
DXT790AP5-13 Applications
There are a lot of Diodes Incorporated
DXT790AP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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