DXT751-13
- Mfr.Part #
- DXT751-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT89-3
- Stock
- 10,059
- In Stock :
- 10,059
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Gain Bandwidth Product :
- 145MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 19 Weeks
- Published :
- 2008
- Case Connection :
- COLLECTOR
- Width :
- 2.5mm
- Current - Collector (Ic) (Max) :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 145MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.5mm
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Height :
- 1.5mm
- Weight :
- 51.993025mg
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Datasheets
- DXT751-13

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
DXT751-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 145MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
DXT751-13 Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
DXT751-13 Applications
There are a lot of Diodes Incorporated
DXT751-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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