DXT5551P5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Pbfree Code :

yes

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Gain Bandwidth Product :

130MHz

Number of Pins :

5

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

180V

JESD-30 Code :

R-PDSO-F3

Published :

2016

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

4

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Package / Case :

PowerDI™ 5

Number of Terminations :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Transition Frequency :

130MHz

REACH SVHC :

No SVHC

Max Collector Current :

600mA

Case Connection :

COLLECTOR

Max Power Dissipation :

2.25W

Collector Emitter Breakdown Voltage :

160V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Manufacturer Package Identifier :

POWERDI-5

Transistor Element Material :

SILICON

Weight :

95.991485mg

Collector Emitter Voltage (VCEO) :

160V

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Continuous Collector Current :

600mA

Terminal Form :

Flat

Base Part Number :

DXT5551

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Terminal Position :

Dual

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

160V

Collector Emitter Saturation Voltage :

200mV

Transistor Type :

NPN

Power Dissipation :

2.25W

Mount :

Surface Mount

Frequency :

130MHz