DXT5401-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Frequency :

300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Width :

2.6mm

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

50nA ICBO

Transition Frequency :

100MHz

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Pin Count :

3

REACH SVHC :

No SVHC

Height :

1.6mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Weight :

51.993025mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

150V

Length :

4.6mm

Collector Emitter Voltage (VCEO) :

150V

Max Breakdown Voltage :

150V

Packaging :

Tape and Reel (TR)

Power Dissipation :

1W

Gain Bandwidth Product :

300MHz

Published :

2013

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Case Connection :

COLLECTOR

Package / Case :

TO-243AA

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

-5V

Number of Terminations :

3

Number of Pins :

4

JESD-30 Code :

R-PSSO-F3

Radiation Hardening :

No

Transistor Type :

PNP

Frequency - Transition :

100MHz

Number of Elements :

1

Collector Base Voltage (VCBO) :

160V

Element Configuration :

Single

Max Collector Current :

600mA

Collector Emitter Saturation Voltage :

-500mV

Max Power Dissipation :

1W