DTA123EM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Published :

2009

Terminal Position :

Dual

Max Power Dissipation :

260mW

Current Rating :

-100mA

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

2.2 k Ω

Number of Elements :

1

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Type :

PNP - Pre-Biased

Surface Mount :

yes

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Power Dissipation :

260mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Number of Pins :

3

Lead Free :

Lead Free

Base Part Number :

DTA123

Factory Lead Time :

2 Weeks

Resistor - Emitter Base (R2) :

2.2 k Ω

Continuous Collector Current :

100mA

Voltage - Rated DC :

-50V

Packaging :

Tape and Reel (TR)

hFE Min :

8

Terminal Form :

Flat

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-723