DSS3540M-7B

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Mfr.Part #
DSS3540M-7B
Manufacturer
Diodes Incorporated
Package / Case
3-UFDFN
Datasheet
Download
Description
TRANS PNP 40V 0.5A 3DFN
Stock
26,481
In Stock :
26,481

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Published :
2011
ECCN Code :
EAR99
Mount :
Surface Mount
JESD-609 Code :
e4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
100MHz
Collector Emitter Voltage (VCEO) :
40V
Continuous Collector Current :
-500mA
Element Configuration :
Single
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Collector Emitter Saturation Voltage :
-350mV
Max Breakdown Voltage :
40V
Collector Base Voltage (VCBO) :
40V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
3
Number of Elements :
1
Pin Count :
3
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Emitter Base Voltage (VEBO) :
-6V
Collector Emitter Breakdown Voltage :
40V
Power Dissipation :
250mW
Package / Case :
3-UFDFN
REACH SVHC :
No SVHC
Base Part Number :
DSS3540M
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 100mA 2V
Transistor Type :
PNP
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
15 Weeks
Terminal Position :
BOTTOM
Max Power Dissipation :
250mW
Case Connection :
COLLECTOR
Max Collector Current :
500mA
Vce Saturation (Max) @ Ib, Ic :
350mV @ 50mA, 500mA
Frequency :
100MHz
Transition Frequency :
100MHz
Datasheets
DSS3540M-7B
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS3540M-7B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:3-UFDFN, Base Part Number:DSS3540M, DSS3540M-7B pinout, DSS3540M-7B datasheet PDF, DSS3540M-7B amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSS3540M-7B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSS3540M-7B


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount

DSS3540M-7B Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 2V.With a collector emitter saturation voltage of -350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

DSS3540M-7B Features


the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 100MHz


DSS3540M-7B Applications


There are a lot of Diodes Incorporated
DSS3540M-7B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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