DSS3540M-7B
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- Mfr.Part #
- DSS3540M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.5A 3DFN
- Stock
- 26,481
- In Stock ：
- 26,481
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e4
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-UFDFN
- Collector Emitter Saturation Voltage :
- -350mV
- Continuous Collector Current :
- -500mA
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- REACH SVHC :
- No SVHC
- Published :
- 2011
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Base Part Number :
- DSS3540M
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 500mA
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 100MHz
- Datasheets
- DSS3540M-7B
DSS3540M-7B Documents
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
DSS3540M-7B Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 2V.With a collector emitter saturation voltage of -350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
DSS3540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 100MHz
DSS3540M-7B Applications
There are a lot of Diodes Incorporated
DSS3540M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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