DSS30101L-7
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- Mfr.Part #
- DSS30101L-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 75,595
- In Stock ：
- 75,595
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 250MHz
- Max Power Dissipation :
- 600mW
- Base Part Number :
- DSS30101
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 200mV
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Pin Count :
- 3
- Mount :
- Surface Mount
- Continuous Collector Current :
- 1A
- Datasheets
- DSS30101L-7
DSS30101L-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS30101L-7 Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
DSS30101L-7 Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
DSS30101L-7 Applications
There are a lot of Diodes Incorporated
DSS30101L-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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