DSS30101L-7
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- Mfr.Part #
- DSS30101L-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 75,595
- In Stock ：
- 75,595
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 50V
- Max Breakdown Voltage :
- 30V
- Base Part Number :
- DSS30101
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 200mV
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 600mW
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Published :
- 2004
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Weight :
- 7.994566mg
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 30V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 250MHz
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- DSS30101L-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DSS30101L-7 Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 100mA, 1A.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.250MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
DSS30101L-7 Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
DSS30101L-7 Applications
There are a lot of Diodes Incorporated
DSS30101L-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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