DSS3515M-7B
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- Mfr.Part #
- DSS3515M-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.5A 3DFN
- Stock
- 94,922
- In Stock ：
- 94,922
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- DSS3515M
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 15V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 1.07mm
- Element Configuration :
- Single
- Width :
- 675μm
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Continuous Collector Current :
- -500mA
- Number of Elements :
- 1
- Max Frequency :
- 100MHz
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 340MHz
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 15V
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 15V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- 3-UFDFN
- Gain Bandwidth Product :
- 340MHz
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -15V
- JESD-609 Code :
- e4
- Max Collector Current :
- 500mA
- Height :
- 480μm
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Datasheets
- DSS3515M-7B
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
DSS3515M-7B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 340MHz.The breakdown input voltage is 15V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DSS3515M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 340MHz
DSS3515M-7B Applications
There are a lot of Diodes Incorporated
DSS3515M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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