DSM80101M-7
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- Mfr.Part #
- DSM80101M-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT26
- Stock
- 49,608
- In Stock ：
- 49,608
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Terminations :
- 6
- Package / Case :
- SOT-23-6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 300mV
- Width :
- 1.6mm
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Transistor Type :
- NPN + Diode (Isolated)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Continuous Collector Current :
- 500mA
- Height :
- 1.1mm
- Max Power Dissipation :
- 600mW
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Published :
- 2014
- Max Breakdown Voltage :
- 80V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- Number of Elements :
- 1
- Length :
- 3mm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PDSO-G6
- Datasheets
- DSM80101M-7
NPN + Diode (Isolated) -65°C~150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON SOT-23-6 Tape & Reel (TR) Surface Mount
DSM80101M-7 Overview
In this device, the DC current gain is 120 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
DSM80101M-7 Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
DSM80101M-7 Applications
There are a lot of Diodes Incorporated
DSM80101M-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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