DSM80100M-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

3mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 1V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Height :

1.1mm

Emitter Base Voltage (VEBO) :

-4V

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

250mV

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

80V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Width :

1.6mm

Number of Elements :

1

Transistor Element Material :

SILICON

Published :

2014

Max Collector Current :

500mA

Polarity :

PNP

Factory Lead Time :

21 Weeks

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

-80V

Power - Max :

600mW

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6

Max Power Dissipation :

600mW

Collector Emitter Saturation Voltage :

-250mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Collector Current :

-500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Mount :

Surface Mount

Transistor Type :

PNP + Diode (Isolated)