DSC2001R0L
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- Mfr.Part #
- DSC2001R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A MINI3
- Stock
- 30,018
- In Stock ：
- 30,018
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Base Part Number :
- DSC2001
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- HTS Code :
- 8541.21.00.75
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Length :
- 2.9mm
- hFE Min :
- 210
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Width :
- 1.5mm
- Height :
- 1.1mm
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Factory Lead Time :
- 10 Weeks
- Max Power Dissipation :
- 200mW
- Max Frequency :
- 150MHz
- Max Breakdown Voltage :
- 50V
- Transistor Element Material :
- SILICON
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Datasheets
- DSC2001R0L
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
DSC2001R0L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
DSC2001R0L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSC2001R0L Applications
There are a lot of Panasonic Electronic Components
DSC2001R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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