DSC200100L
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- Mfr.Part #
- DSC200100L
- Manufacturer
- Panasonic
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A MINI3
- Stock
- 146,251
- In Stock ：
- 146,251
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- HTS Code :
- 8541.21.00.75
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Height :
- 1.1mm
- Number of Elements :
- 1
- Max Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Published :
- 2009
- Base Part Number :
- DSC2001
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Continuous Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Emitter Saturation Voltage :
- 300mV
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transition Frequency :
- 150MHz
- Factory Lead Time :
- 10 Weeks
- Gain Bandwidth Product :
- 150MHz
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Length :
- 2.9mm
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 7V
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 210
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.5mm
- Datasheets
- DSC200100L
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
DSC200100L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of 100mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
DSC200100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
DSC200100L Applications
There are a lot of Panasonic Electronic Components
DSC200100L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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