DN3135N8-G
- Mfr.Part #
- DN3135N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 135MA TO243AA
- Stock
- 11,911
- In Stock :
- 11,911
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Power Dissipation (Max) :
- 1.3W (Ta)
- Packaging :
- Tape and Reel (TR)
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max :
- 1.3W Ta
- RoHS :
- Details
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Manufacturer :
- Microchip
- Vgs(th) (Max) @ Id :
- --
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Supplier Device Package :
- TO-243AA (SOT-89)
- Continuous Drain Current (ID) :
- 135mA
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 35 Ω
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- yes
- Feedback Cap-Max (Crss) :
- 10 pF
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-243AA
- Element Configuration :
- Single
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- DN3135
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Channel Mode :
- Depletion
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Continuous Drain Current Id :
- 135
- Brand :
- Microchip Technology
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 35 Ω @ 150mA, 0V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 135mA Tj
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 1.3W
- Current :
- 135A
- Drain to Source Breakdown Voltage :
- 350V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 18 Weeks
- Polarity/Channel Type :
- N-Channel
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Height :
- 1.6mm
- Number of Channels :
- 1
- Rise Time :
- 15ns
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Drain to Source Voltage (Vdss) :
- 350V
- Product Status :
- Active
- Type :
- FET
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 350 V
- Turn-Off Delay Time :
- 15 ns
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 1.3 W
- Channel Type :
- N
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Qualification :
- -
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Turn On Delay Time :
- 10 ns
- FET Feature :
- Depletion Mode
- ECCN Code :
- EAR99
- Length :
- 4.6mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Product Type :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- Compliant
- Weight :
- 52.786812mg
- Product :
- MOSFET Small Signal
- Width :
- 2.6mm
- Fall Time (Typ) :
- 15 ns
- Package / Case :
- TO-243AA
- Operating Mode :
- Depletion Mode
- MSL :
- MSL 1 - Unlimited
- Voltage :
- 350V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOW THRESHOLD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Series :
- --
- Datasheets
- DN3135N8-G
DN3135N8-G Documents

N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA
DN3135N8-G Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3135N8-G Features
a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)
DN3135N8-G Applications
There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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