DN3135N8-G

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Mfr.Part #
DN3135N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 135MA TO243AA
Stock
11,911
In Stock :
11,911

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
--
Channel Mode :
Depletion
Drain-source On Resistance-Max :
35 Ω
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Surface Mount :
yes
JEDEC-95 Code :
TO-243AA
Turn-Off Delay Time :
15 ns
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
0V
Weight :
52.786812mg
Transistor Type :
1 N-Channel
Terminal Position :
Single
Continuous Drain Current (ID) :
135mA
Number of Pins :
3
DS Breakdown Voltage-Min :
350 V
Continuous Drain Current Id :
135
Minimum Operating Temperature :
- 55 C
Series :
--
REACH SVHC :
No SVHC
Rise Time :
15ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Type :
N
FET Type :
N-Channel
Fall Time (Typ) :
15 ns
Height :
1.6mm
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Base Product Number :
DN3135
Product Status :
Active
Power Dissipation (Max) :
1.3W (Ta)
Power Dissipation :
1.3W
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
Additional Feature :
LOW THRESHOLD
FET Feature :
Depletion Mode
Number of Elements :
1
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSSO-F3
Drain to Source Breakdown Voltage :
350V
Drain to Source Voltage (Vdss) :
350V
Number of Terminations :
3
Maximum Operating Temperature :
+ 150 C
Qualification :
-
Product Type :
MOSFET
Brand :
Microchip Technology
Terminal Form :
Flat
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Length :
4.6mm
Configuration :
Single
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
135mA Tj
Factory Lead Time :
18 Weeks
Vgs (Max) :
±20V
Mounting Style :
SMD/SMT
Peak Reflow Temperature (Cel) :
260
Feedback Cap-Max (Crss) :
10 pF
Supplier Device Package :
TO-243AA (SOT-89)
Width :
2.6mm
Mount :
Surface Mount
Current :
135A
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Power Dissipation-Max :
1.3W Ta
Type :
FET
Manufacturer :
Microchip
RoHS :
Details
Packaging :
Tape and Reel (TR)
MSL :
MSL 1 - Unlimited
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
10 ns
Product :
MOSFET Small Signal
Package / Case :
TO-243AA
Power Dissipation-Max (Abs) :
1.3 W
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Number of Channels :
1
Published :
2013
Voltage :
350V
Operating Mode :
Depletion Mode
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Number of Terminals :
3
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, Type:FET, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, Number of Channels:1, Voltage:350V, DN3135N8-G pinout, DN3135N8-G datasheet PDF, DN3135N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135N8-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA

DN3135N8-G Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3135N8-G Features


a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135N8-G Applications


There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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