DN3135N8-G
- Mfr.Part #
- DN3135N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 135MA TO243AA
- Stock
- 11,911
- In Stock :
- 11,911
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 350V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 1.3W Ta
- Channel Type :
- N
- Polarity/Channel Type :
- N-Channel
- Continuous Drain Current Id :
- 135
- Voltage :
- 350V
- Series :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 135mA Tj
- JESD-30 Code :
- R-PSSO-F3
- Current :
- 135A
- Terminal Form :
- Flat
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Weight :
- 52.786812mg
- Base Product Number :
- DN3135
- Product :
- MOSFET Small Signal
- Number of Elements :
- 1
- Length :
- 4.6mm
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Height :
- 1.6mm
- Case Connection :
- DRAIN
- Brand :
- Microchip Technology
- Channel Mode :
- Depletion
- Number of Terminations :
- 3
- Factory Lead Time :
- 18 Weeks
- Type :
- FET
- Power Dissipation :
- 1.3W
- Continuous Drain Current (ID) :
- 135mA
- RoHS :
- Details
- Power Dissipation-Max (Abs) :
- 1.3 W
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Width :
- 2.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Mode :
- Depletion Mode
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Qualification :
- -
- Configuration :
- Single
- Manufacturer :
- Microchip
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-243AA
- FET Feature :
- Depletion Mode
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 350 V
- Mount :
- Surface Mount
- Transistor Polarity :
- N-Channel
- Published :
- 2013
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 35 Ω @ 150mA, 0V
- Vgs(th) (Max) @ Id :
- --
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Rise Time :
- 15ns
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LOW THRESHOLD
- Power Dissipation (Max) :
- 1.3W (Ta)
- Number of Channels :
- 1
- Maximum Operating Temperature :
- + 150 C
- Turn On Delay Time :
- 10 ns
- Drain-source On Resistance-Max :
- 35 Ω
- Fall Time (Typ) :
- 15 ns
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 350V
- MSL :
- MSL 1 - Unlimited
- Product Status :
- Active
- Feedback Cap-Max (Crss) :
- 10 pF
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-243AA (SOT-89)
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 15 ns
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Datasheets
- DN3135N8-G
DN3135N8-G Documents

N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA
DN3135N8-G Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3135N8-G Features
a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)
DN3135N8-G Applications
There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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