DN3135N8-G

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Mfr.Part #
DN3135N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 135MA TO243AA
Stock
11,911
In Stock :
11,911

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
Depletion Mode
Factory Lead Time :
18 Weeks
MSL :
MSL 1 - Unlimited
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
350V
Time@Peak Reflow Temperature-Max (s) :
40
Product Status :
Active
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
135mA Tj
Base Product Number :
DN3135
Weight :
52.786812mg
Surface Mount :
yes
Turn-Off Delay Time :
15 ns
Power Dissipation-Max (Abs) :
1.3 W
Height :
1.6mm
Continuous Drain Current (ID) :
135mA
Qualification Status :
Not Qualified
Number of Elements :
1
Package Shape :
RECTANGULAR
Terminal Finish :
Matte Tin (Sn)
Published :
2013
Fall Time (Typ) :
15 ns
Power Dissipation :
1.3W
Turn On Delay Time :
10 ns
Number of Pins :
3
Package / Case :
TO-243AA
Product Type :
MOSFET
RoHS :
Details
Rise Time :
15ns
DS Breakdown Voltage-Min :
350 V
Maximum Operating Temperature :
+ 150 C
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Reach Compliance Code :
Compliant
Brand :
Microchip Technology
Additional Feature :
LOW THRESHOLD
Drive Voltage (Max Rds On,Min Rds On) :
0V
Type :
FET
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Length :
4.6mm
Lead Free :
Lead Free
Case Connection :
DRAIN
Terminal Form :
Flat
Qualification :
-
JESD-30 Code :
R-PSSO-F3
Drain to Source Voltage (Vdss) :
350V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current :
135A
Transistor Application :
SWITCHING
Number of Terminations :
3
Power Dissipation-Max :
1.3W Ta
Supplier Device Package :
TO-243AA (SOT-89)
Feedback Cap-Max (Crss) :
10 pF
Channel Mode :
Depletion
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
--
Operating Mode :
Depletion Mode
Configuration :
Single
Width :
2.6mm
Number of Terminals :
3
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Packaging :
Tape and Reel (TR)
JEDEC-95 Code :
TO-243AA
Continuous Drain Current Id :
135
Peak Reflow Temperature (Cel) :
260
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Mount :
Surface Mount
Drain-source On Resistance-Max :
35 Ω
FET Type :
N-Channel
Product :
MOSFET Small Signal
Product Category :
MOSFET
Mounting Style :
SMD/SMT
Power Dissipation (Max) :
1.3W (Ta)
ECCN Code :
EAR99
Manufacturer :
Microchip
Terminal Position :
Single
Series :
--
REACH SVHC :
No SVHC
Channel Type :
N
Voltage :
350V
Gate to Source Voltage (Vgs) :
20V
Polarity/Channel Type :
N-Channel
Number of Channels :
1
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Datasheets
DN3135N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-243AA, Type:FET, Number of Terminations:3, Voltage:350V, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, DN3135N8-G pinout, DN3135N8-G datasheet PDF, DN3135N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135N8-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA

DN3135N8-G Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3135N8-G Features


a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135N8-G Applications


There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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