DN3135N8-G

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Mfr.Part #
DN3135N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 135MA TO243AA
Stock
11,911
In Stock :
11,911

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Power Dissipation (Max) :
1.3W (Ta)
Packaging :
Tape and Reel (TR)
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Mounting Style :
SMD/SMT
Power Dissipation-Max :
1.3W Ta
RoHS :
Details
Number of Terminals :
3
Terminal Position :
Single
Manufacturer :
Microchip
Vgs(th) (Max) @ Id :
--
Mounting Type :
Surface Mount
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-243AA (SOT-89)
Continuous Drain Current (ID) :
135mA
Number of Elements :
1
Drain-source On Resistance-Max :
35 Ω
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Surface Mount :
yes
Feedback Cap-Max (Crss) :
10 pF
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
TO-243AA
Element Configuration :
Single
Transistor Type :
1 N-Channel
Base Product Number :
DN3135
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Channel Mode :
Depletion
Drive Voltage (Max Rds On,Min Rds On) :
0V
Continuous Drain Current Id :
135
Brand :
Microchip Technology
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
135mA Tj
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Number of Terminations :
3
JESD-30 Code :
R-PSSO-F3
Power Dissipation :
1.3W
Current :
135A
Drain to Source Breakdown Voltage :
350V
Qualification Status :
Not Qualified
Factory Lead Time :
18 Weeks
Polarity/Channel Type :
N-Channel
Published :
2013
Vgs (Max) :
±20V
Height :
1.6mm
Number of Channels :
1
Rise Time :
15ns
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Drain to Source Voltage (Vdss) :
350V
Product Status :
Active
Type :
FET
FET Type :
N-Channel
DS Breakdown Voltage-Min :
350 V
Turn-Off Delay Time :
15 ns
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
1.3 W
Channel Type :
N
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Qualification :
-
Terminal Form :
Flat
REACH SVHC :
No SVHC
Number of Pins :
3
Turn On Delay Time :
10 ns
FET Feature :
Depletion Mode
ECCN Code :
EAR99
Length :
4.6mm
Time@Peak Reflow Temperature-Max (s) :
40
Product Type :
MOSFET
Terminal Finish :
Matte Tin (Sn)
Reach Compliance Code :
Compliant
Weight :
52.786812mg
Product :
MOSFET Small Signal
Width :
2.6mm
Fall Time (Typ) :
15 ns
Package / Case :
TO-243AA
Operating Mode :
Depletion Mode
MSL :
MSL 1 - Unlimited
Voltage :
350V
RoHS Status :
ROHS3 Compliant
Additional Feature :
LOW THRESHOLD
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Series :
--
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1, Type:FET, Number of Pins:3, Package / Case:TO-243AA, Voltage:350V, DN3135N8-G pinout, DN3135N8-G datasheet PDF, DN3135N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135N8-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA

DN3135N8-G Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3135N8-G Features


a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135N8-G Applications


There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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