DN3135N8-G
- Mfr.Part #
- DN3135N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 135MA TO243AA
- Stock
- 11,911
- In Stock :
- 11,911
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Depletion Mode
- Factory Lead Time :
- 18 Weeks
- MSL :
- MSL 1 - Unlimited
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 350V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 135mA Tj
- Base Product Number :
- DN3135
- Weight :
- 52.786812mg
- Surface Mount :
- yes
- Turn-Off Delay Time :
- 15 ns
- Power Dissipation-Max (Abs) :
- 1.3 W
- Height :
- 1.6mm
- Continuous Drain Current (ID) :
- 135mA
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2013
- Fall Time (Typ) :
- 15 ns
- Power Dissipation :
- 1.3W
- Turn On Delay Time :
- 10 ns
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- Product Type :
- MOSFET
- RoHS :
- Details
- Rise Time :
- 15ns
- DS Breakdown Voltage-Min :
- 350 V
- Maximum Operating Temperature :
- + 150 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Reach Compliance Code :
- Compliant
- Brand :
- Microchip Technology
- Additional Feature :
- LOW THRESHOLD
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Type :
- FET
- Rds On (Max) @ Id, Vgs :
- 35 Ω @ 150mA, 0V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Length :
- 4.6mm
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Terminal Form :
- Flat
- Qualification :
- -
- JESD-30 Code :
- R-PSSO-F3
- Drain to Source Voltage (Vdss) :
- 350V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 135A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 1.3W Ta
- Supplier Device Package :
- TO-243AA (SOT-89)
- Feedback Cap-Max (Crss) :
- 10 pF
- Channel Mode :
- Depletion
- Transistor Polarity :
- N-Channel
- Vgs(th) (Max) @ Id :
- --
- Operating Mode :
- Depletion Mode
- Configuration :
- Single
- Width :
- 2.6mm
- Number of Terminals :
- 3
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- TO-243AA
- Continuous Drain Current Id :
- 135
- Peak Reflow Temperature (Cel) :
- 260
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 35 Ω
- FET Type :
- N-Channel
- Product :
- MOSFET Small Signal
- Product Category :
- MOSFET
- Mounting Style :
- SMD/SMT
- Power Dissipation (Max) :
- 1.3W (Ta)
- ECCN Code :
- EAR99
- Manufacturer :
- Microchip
- Terminal Position :
- Single
- Series :
- --
- REACH SVHC :
- No SVHC
- Channel Type :
- N
- Voltage :
- 350V
- Gate to Source Voltage (Vgs) :
- 20V
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- DN3135N8-G

N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA
DN3135N8-G Overview
The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3135N8-G Features
a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)
DN3135N8-G Applications
There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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