DN3135N8-G

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Mfr.Part #
DN3135N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 135MA TO243AA
Stock
11,911
In Stock :
11,911

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
350V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Power Dissipation-Max :
1.3W Ta
Channel Type :
N
Polarity/Channel Type :
N-Channel
Continuous Drain Current Id :
135
Voltage :
350V
Series :
--
Current - Continuous Drain (Id) @ 25°C :
135mA Tj
JESD-30 Code :
R-PSSO-F3
Current :
135A
Terminal Form :
Flat
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Weight :
52.786812mg
Base Product Number :
DN3135
Product :
MOSFET Small Signal
Number of Elements :
1
Length :
4.6mm
Minimum Operating Temperature :
- 55 C
Packaging :
Tape and Reel (TR)
Terminal Position :
Single
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
40
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Height :
1.6mm
Case Connection :
DRAIN
Brand :
Microchip Technology
Channel Mode :
Depletion
Number of Terminations :
3
Factory Lead Time :
18 Weeks
Type :
FET
Power Dissipation :
1.3W
Continuous Drain Current (ID) :
135mA
RoHS :
Details
Power Dissipation-Max (Abs) :
1.3 W
Package / Case :
TO-243AA
ECCN Code :
EAR99
Width :
2.6mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Operating Mode :
Depletion Mode
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
3
Qualification :
-
Configuration :
Single
Manufacturer :
Microchip
Number of Terminals :
3
FET Type :
N-Channel
JEDEC-95 Code :
TO-243AA
FET Feature :
Depletion Mode
Reach Compliance Code :
Compliant
DS Breakdown Voltage-Min :
350 V
Mount :
Surface Mount
Transistor Polarity :
N-Channel
Published :
2013
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
Vgs(th) (Max) @ Id :
--
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
0V
Rise Time :
15ns
Mounting Style :
SMD/SMT
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LOW THRESHOLD
Power Dissipation (Max) :
1.3W (Ta)
Number of Channels :
1
Maximum Operating Temperature :
+ 150 C
Turn On Delay Time :
10 ns
Drain-source On Resistance-Max :
35 Ω
Fall Time (Typ) :
15 ns
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
350V
MSL :
MSL 1 - Unlimited
Product Status :
Active
Feedback Cap-Max (Crss) :
10 pF
Product Type :
MOSFET
Qualification Status :
Not Qualified
Supplier Device Package :
TO-243AA (SOT-89)
Surface Mount :
yes
JESD-609 Code :
e3
Turn-Off Delay Time :
15 ns
Transistor Type :
1 N-Channel
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G from Chip IC,where excellence meets affordability. This product stands out with its Voltage:350V, Number of Terminations:3, Type:FET, Package / Case:TO-243AA, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Channels:1, DN3135N8-G pinout, DN3135N8-G datasheet PDF, DN3135N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135N8-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-243AA

DN3135N8-G Overview


The maximum input capacitance of this device is 120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 135mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 350 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3135N8-G Features


a continuous drain current (ID) of 135mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135N8-G Applications


There are a lot of Microchip Technology
DN3135N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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