DN3135K1-G

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Mfr.Part #
DN3135K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 350V 72MA SOT23-3
Stock
7,264
In Stock :
7,264

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
DN3135
Product Type :
MOSFET
Additional Feature :
LOW THRESHOLD
Minimum Operating Temperature :
-55 °C
Time@Peak Reflow Temperature-Max (s) :
40
Product Status :
Active
Number of Elements :
1
Width :
1.3mm
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25°C :
72mA Tj
RoHS :
Details
DS Breakdown Voltage-Min :
350 V
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
Maximum Operating Temperature :
+150 °C
Drain to Source Voltage (Vdss) :
350V
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
10 ns
Drain-source On Resistance-Max :
35 Ω
Configuration :
Single
Mounting Style :
SMD/SMT
HTS Code :
8541.21.00.95
Number of Terminals :
3
Feedback Cap-Max (Crss) :
10 pF
Reach Compliance Code :
Compliant
Channel Type :
N
Published :
2010
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
0V
Operating Temperature :
-55°C~150°C TJ
Product Category :
MOSFET
Brand :
Microchip Technology
Operating Mode :
Depletion Mode
Number of Channels :
1
Continuous Drain Current (ID) :
72mA
Height :
950μm
Rise Time :
15ns
Drain to Source Breakdown Voltage :
350V
Surface Mount :
yes
Mounting Type :
Surface Mount
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Supplier Device Package :
SOT-23-3 (TO-236)
Lead Free :
Lead Free
Pin Count :
3
JEDEC-95 Code :
TO-236AB
Power Dissipation-Max :
360mW Ta
Type :
FET
REACH SVHC :
No SVHC
Package / Case :
TO-236-3, SC-59, SOT-23-3
Fall Time (Typ) :
15 ns
Number of Terminations :
3
Qualification Status :
Not Qualified
Power Dissipation :
360mW
JESD-609 Code :
e3
Continuous Drain Current Id :
72mA
Factory Lead Time :
17 Weeks
Turn-Off Delay Time :
15 ns
Drain Current-Max (Abs) (ID) :
0.072A
Transistor Type :
1 N-Channel
Package Type :
SOT-23
Terminal Finish :
Matte Tin (Sn)
Weight :
1.437803g
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Series :
--
Package Shape :
RECTANGULAR
MSL :
MSL 1 - Unlimited
Qualification :
-
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
360mW (Ta)
Vgs (Max) :
±20V
JESD-30 Code :
R-PDSO-G3
Power Dissipation-Max (Abs) :
0.36 W
Manufacturer :
Microchip
FET Feature :
Depletion Mode
Transistor Application :
SWITCHING
FET Type :
N-Channel
Number of Elements per Chip :
1
Terminal Position :
Dual
Length :
2.9mm
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Terminal Form :
Gull wing
Product :
MOSFET Small Signal
Channel Mode :
Depletion
Datasheets
DN3135K1-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135K1-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Type:FET, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Number of Pins:3, DN3135K1-G pinout, DN3135K1-G datasheet PDF, DN3135K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135K1-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

DN3135K1-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 350V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 350V.There is no drain current on this device since the maximum continuous current it can conduct is 0.072A.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 350 V, it should remain above the 350 V level.The transistor must receive a 350V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).

DN3135K1-G Features


a continuous drain current (ID) of 72mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135K1-G Applications


There are a lot of Microchip Technology
DN3135K1-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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