DN3135K1-G

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Mfr.Part #
DN3135K1-G
Manufacturer
Microchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 350V 72MA SOT23-3
Stock
7,264
In Stock :
7,264

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Vgs(th) (Max) @ Id :
--
Qualification Status :
Not Qualified
Product Type :
MOSFET
Peak Reflow Temperature (Cel) :
260
Power Dissipation (Max) :
360mW (Ta)
Operating Mode :
Depletion Mode
Rise Time :
15ns
Width :
1.3mm
Configuration :
Single
Product Status :
Active
Element Configuration :
Single
ECCN Code :
EAR99
Package Shape :
RECTANGULAR
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
FET Feature :
Depletion Mode
Product :
MOSFET Small Signal
JESD-609 Code :
e3
Product Category :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Pin Count :
3
Terminal Form :
Gull wing
Minimum Operating Temperature :
-55 °C
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification :
-
Number of Elements :
1
Mount :
Surface Mount
Maximum Operating Temperature :
+150 °C
Type :
FET
MSL :
MSL 1 - Unlimited
Reach Compliance Code :
Compliant
REACH SVHC :
No SVHC
Factory Lead Time :
17 Weeks
Channel Mode :
Depletion
Feedback Cap-Max (Crss) :
10 pF
JESD-30 Code :
R-PDSO-G3
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
350 V
Current - Continuous Drain (Id) @ 25°C :
72mA Tj
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Base Product Number :
DN3135
Channel Type :
N
Weight :
1.437803g
Drain to Source Voltage (Vdss) :
350V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
Series :
--
Brand :
Microchip Technology
Fall Time (Typ) :
15 ns
Continuous Drain Current (ID) :
72mA
HTS Code :
8541.21.00.95
Number of Terminals :
3
Terminal Finish :
Matte Tin (Sn)
JEDEC-95 Code :
TO-236AB
Package Type :
SOT-23
Continuous Drain Current Id :
72mA
Rds On (Max) @ Id, Vgs :
35 Ω @ 150mA, 0V
Drain to Source Breakdown Voltage :
350V
Drive Voltage (Max Rds On,Min Rds On) :
0V
Supplier Device Package :
SOT-23-3 (TO-236)
Surface Mount :
yes
Lead Free :
Lead Free
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Application :
SWITCHING
RoHS :
Details
Mounting Style :
SMD/SMT
Additional Feature :
LOW THRESHOLD
Power Dissipation :
360mW
Drain-source On Resistance-Max :
35 Ω
Time@Peak Reflow Temperature-Max (s) :
40
Number of Elements per Chip :
1
Power Dissipation-Max (Abs) :
0.36 W
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Number of Channels :
1
Turn-Off Delay Time :
15 ns
Length :
2.9mm
Drain Current-Max (Abs) (ID) :
0.072A
Power Dissipation-Max :
360mW Ta
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Manufacturer :
Microchip
Turn On Delay Time :
10 ns
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Height :
950μm
Published :
2010
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3135K1-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Type:FET, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, DN3135K1-G pinout, DN3135K1-G datasheet PDF, DN3135K1-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3135K1-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3135K1-G


N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-236-3, SC-59, SOT-23-3

DN3135K1-G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 350V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 350V.There is no drain current on this device since the maximum continuous current it can conduct is 0.072A.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 350 V, it should remain above the 350 V level.The transistor must receive a 350V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).

DN3135K1-G Features


a continuous drain current (ID) of 72mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)


DN3135K1-G Applications


There are a lot of Microchip Technology
DN3135K1-G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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