DN3135K1-G
- Mfr.Part #
- DN3135K1-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 72MA SOT23-3
- Stock
- 7,264
- In Stock :
- 7,264
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- DN3135
- Product Type :
- MOSFET
- Additional Feature :
- LOW THRESHOLD
- Minimum Operating Temperature :
- -55 °C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Product Status :
- Active
- Number of Elements :
- 1
- Width :
- 1.3mm
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Current - Continuous Drain (Id) @ 25°C :
- 72mA Tj
- RoHS :
- Details
- DS Breakdown Voltage-Min :
- 350 V
- Rds On (Max) @ Id, Vgs :
- 35 Ω @ 150mA, 0V
- Maximum Operating Temperature :
- +150 °C
- Drain to Source Voltage (Vdss) :
- 350V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 10 ns
- Drain-source On Resistance-Max :
- 35 Ω
- Configuration :
- Single
- Mounting Style :
- SMD/SMT
- HTS Code :
- 8541.21.00.95
- Number of Terminals :
- 3
- Feedback Cap-Max (Crss) :
- 10 pF
- Reach Compliance Code :
- Compliant
- Channel Type :
- N
- Published :
- 2010
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Operating Temperature :
- -55°C~150°C TJ
- Product Category :
- MOSFET
- Brand :
- Microchip Technology
- Operating Mode :
- Depletion Mode
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 72mA
- Height :
- 950μm
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- 350V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Lead Free :
- Lead Free
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-236AB
- Power Dissipation-Max :
- 360mW Ta
- Type :
- FET
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Fall Time (Typ) :
- 15 ns
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 360mW
- JESD-609 Code :
- e3
- Continuous Drain Current Id :
- 72mA
- Factory Lead Time :
- 17 Weeks
- Turn-Off Delay Time :
- 15 ns
- Drain Current-Max (Abs) (ID) :
- 0.072A
- Transistor Type :
- 1 N-Channel
- Package Type :
- SOT-23
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 1.437803g
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Series :
- --
- Package Shape :
- RECTANGULAR
- MSL :
- MSL 1 - Unlimited
- Qualification :
- -
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 360mW (Ta)
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-G3
- Power Dissipation-Max (Abs) :
- 0.36 W
- Manufacturer :
- Microchip
- FET Feature :
- Depletion Mode
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Elements per Chip :
- 1
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Terminal Form :
- Gull wing
- Product :
- MOSFET Small Signal
- Channel Mode :
- Depletion
- Datasheets
- DN3135K1-G

N-Channel Tape & Reel (TR) 35 Ω @ 150mA, 0V ±20V 120pF @ 25V 350V TO-236-3, SC-59, SOT-23-3
DN3135K1-G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 120pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 350V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 350V.There is no drain current on this device since the maximum continuous current it can conduct is 0.072A.As a result of its turn-off delay time, which is 15 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 350 V, it should remain above the 350 V level.The transistor must receive a 350V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V).
DN3135K1-G Features
a continuous drain current (ID) of 72mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
a 350V drain to source voltage (Vdss)
DN3135K1-G Applications
There are a lot of Microchip Technology
DN3135K1-G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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