DN3145N8-G

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Mfr.Part #
DN3145N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 450V 100MA TO243AA
Stock
7,039
In Stock :
7,039

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Radiation Hardening :
No
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2008
Continuous Drain Current Id :
100
Terminal Position :
Single
ECCN Code :
EAR99
FET Feature :
Depletion Mode
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Depletion
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
60 Ω
Manufacturer :
Microchip
Number of Terminals :
3
Length :
4.6mm
Turn-Off Delay Time :
20 ns
Fall Time (Typ) :
15 ns
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Qualification Status :
Not Qualified
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Series :
--
Rds On (Max) @ Id, Vgs :
60 Ω @ 100mA, 0V
Configuration :
Single
Base Product Number :
DN3145
JESD-30 Code :
R-PSSO-F3
Current - Continuous Drain (Id) @ 25°C :
100mA Tj
Element Configuration :
Single
Turn On Delay Time :
10 ns
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
450V
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Product Status :
Active
JESD-609 Code :
e3
Power Dissipation (Max) :
1.3W (Ta)
Package / Case :
TO-243AA
Channel Type :
N
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
2.6mm
Height :
1.6mm
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Flat
Terminal Finish :
Matte Tin (Sn)
Case Connection :
DRAIN
Supplier Device Package :
TO-243AA (SOT-89)
DS Breakdown Voltage-Min :
450 V
Operating Mode :
Depletion Mode
Drain to Source Voltage (Vdss) :
450V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max (Abs) :
1.3 W
Mount :
Surface Mount
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
--
Product :
MOSFET Small Signal
Power Dissipation :
1.3W
Factory Lead Time :
6 Weeks
JEDEC-95 Code :
TO-243AA
Lead Free :
Lead Free
Surface Mount :
yes
Rise Time :
15ns
Drive Voltage (Max Rds On,Min Rds On) :
0V
Mounting Style :
SMD/SMT
Number of Elements :
1
Brand :
Microchip Technology / Atmel
Number of Pins :
3
Continuous Drain Current (ID) :
100mA
Number of Channels :
1
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
1.3W Ta
RoHS :
Details
Feedback Cap-Max (Crss) :
10 pF
Type :
FET
Reach Compliance Code :
Compliant
Weight :
52.786812mg
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Datasheets
DN3145N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3145N8-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-243AA, Number of Pins:3, Number of Channels:1, Type:FET, DN3145N8-G pinout, DN3145N8-G datasheet PDF, DN3145N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3145N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3145N8-G


N-Channel Tape & Reel (TR) 60 Ω @ 100mA, 0V ±20V 120pF @ 25V 450V TO-243AA

DN3145N8-G Overview


A device's maximum input capacitance is 120pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=450V, and this device has a drain-to-source breakdown voltage of 450V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 450 V.To operate this transistor, you need to apply a 450V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN3145N8-G Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 450V voltage
the turn-off delay time is 20 ns
a 450V drain to source voltage (Vdss)


DN3145N8-G Applications


There are a lot of Microchip Technology
DN3145N8-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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