DN2625DK6-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Product Type :

MOSFET

Configuration :

Dual

Product :

MOSFET Small Signal

Published :

2013

Current :

11A

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

5.1mm

Drain-source On Resistance-Max :

3.5 Ω

Number of Terminations :

8

Mounting Style :

SMD/SMT

Manufacturer :

Microchip

Resistance :

3.5Ohm

Number of Elements per Chip :

1

Current - Continuous Drain (Id) @ 25°C :

1.1A

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Minimum Operating Temperature :

-55 °C

Transistor Application :

SWITCHING

Mount :

Surface Mount

Package Type :

DFN

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+150 °C

Surface Mount :

yes

RoHS :

Details

Transistor Polarity :

N Channel

Product Category :

MOSFET

Operating Mode :

Depletion Mode

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Qualification :

-

Pulsed Drain Current-Max (IDM) :

3.3 A

FET Feature :

Depletion Mode

Channel Type :

Dual N

Number of Elements :

1

JESD-30 Code :

R-PDSO-N8

Rise Time :

20ns

Transistor Type :

2 N-Channel

Additional Feature :

LOW THRESHOLD

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

1.1A

Vgs(th) (Max) @ Id :

--

Terminal Form :

NO LEAD

FET Type :

2 N-Channel (Dual)

Package :

Tray

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Series :

--

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

7.04nC @ 1.5V

Channel Mode :

Depletion

DS Breakdown Voltage-Min :

250 V

Length :

5.1mm

Fall Time (Typ) :

20 ns

Terminal Position :

Dual

Voltage :

250V

Element Configuration :

Dual

Package Shape :

RECTANGULAR

Technology :

Si

Power - Max :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 1A, 0V

Height :

0.85mm

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Brand :

Microchip Technology / Atmel

Turn-Off Delay Time :

10 ns

Turn On Delay Time :

10 ns

Continuous Drain Current Id :

1.1A

Number of Channels :

2

Base Product Number :

DN2625

Polarity/Channel Type :

N-Channel

Number of Terminals :

8

Package / Case :

8-VDFN Exposed Pad

Supplier Device Package :

8-DFN (5x5)

Transistor Element Material :

SILICON

Pin Count :

8

Drain to Source Voltage (Vdss) :

250V

Terminal Finish :

MATTE TIN

Weight :

37.393021mg

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

Compliant

Packaging :

Tray

ECCN Code :

EAR99