DN2625K4-G

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Mfr.Part #
DN2625K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 250V 1.1A TO252
Stock
2,218
In Stock :
2,218

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Details
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
1.1A Tj
Polarity/Channel Type :
N-Channel
Manufacturer :
Microchip
Rise Time :
20ns
Case Connection :
DRAIN
Vgs (Max) :
±20V
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
0V
Drain to Source Breakdown Voltage :
250V
Mounting Style :
SMD/SMT
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Channel Type :
Dual N
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-252, (D-Pak)
FET Feature :
Depletion Mode
Turn-Off Delay Time :
10 ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product :
MOSFET Small Signal
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Polarity :
N-Channel
Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
7.04nC @ 1.5V
Number of Terminations :
2
Length :
6.73mm
JESD-30 Code :
R-PSSO-G2
Height :
2.39mm
Pulsed Drain Current-Max (IDM) :
3.3 A
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Published :
2013
Drain to Source Voltage (Vdss) :
250V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Product Type :
MOSFET
Drain-source On Resistance-Max :
3.5 Ω
Qualification Status :
Not Qualified
Base Product Number :
DN2625
Rds On (Max) @ Id, Vgs :
3.5 Ω @ 1A, 0V
MSL :
MSL 3 - 168 hours
Element Configuration :
Single
Product Status :
Active
Operating Mode :
Depletion Mode
Qualification :
-
JEDEC-95 Code :
TO-252
Number of Channels :
1
Power Dissipation (Max) :
--
Minimum Operating Temperature :
-55 °C
Continuous Drain Current (ID) :
1.1A
FET Type :
N-Channel
Additional Feature :
LOW THRESHOLD
Maximum Operating Temperature :
+150 °C
Reach Compliance Code :
Compliant
Product Category :
MOSFET
Weight :
3.949996g
Factory Lead Time :
19 Weeks
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
--
Continuous Drain Current Id :
1.1
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Channel Mode :
Depletion
Number of Elements per Chip :
1
Width :
6.1mm
Brand :
Microchip Technology / Atmel
Pin Count :
3
Series :
--
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Power Dissipation :
-
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 25V
Surface Mount :
yes
Number of Terminals :
2
Number of Pins :
3
DS Breakdown Voltage-Min :
250 V
Fall Time (Typ) :
20 ns
Turn On Delay Time :
10 ns
Package Type :
DPAK (TO-252)
Datasheets
DN2625K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2625K4-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Channels:1, Number of Pins:3, DN2625K4-G pinout, DN2625K4-G datasheet PDF, DN2625K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2625K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2625K4-G


N-Channel Tape & Reel (TR) 3.5 Ω @ 1A, 0V ±20V 1000pF @ 25V 7.04nC @ 1.5V 250V TO-252-3, DPak (2 Leads + Tab), SC-63

DN2625K4-G Overview


A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.Its maximum pulsed drain current is 3.3 A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.

DN2625K4-G Features


a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 3.3 A.
a 250V drain to source voltage (Vdss)


DN2625K4-G Applications


There are a lot of Microchip Technology
DN2625K4-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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