DN2625K4-G
- Mfr.Part #
- DN2625K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 1.1A TO252
- Stock
- 2,218
- In Stock :
- 2,218
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A Tj
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- Microchip
- Rise Time :
- 20ns
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Drain to Source Breakdown Voltage :
- 250V
- Mounting Style :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Channel Type :
- Dual N
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- TO-252, (D-Pak)
- FET Feature :
- Depletion Mode
- Turn-Off Delay Time :
- 10 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product :
- MOSFET Small Signal
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 7.04nC @ 1.5V
- Number of Terminations :
- 2
- Length :
- 6.73mm
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 2.39mm
- Pulsed Drain Current-Max (IDM) :
- 3.3 A
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 3.5 Ω
- Qualification Status :
- Not Qualified
- Base Product Number :
- DN2625
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 1A, 0V
- MSL :
- MSL 3 - 168 hours
- Element Configuration :
- Single
- Product Status :
- Active
- Operating Mode :
- Depletion Mode
- Qualification :
- -
- JEDEC-95 Code :
- TO-252
- Number of Channels :
- 1
- Power Dissipation (Max) :
- --
- Minimum Operating Temperature :
- -55 °C
- Continuous Drain Current (ID) :
- 1.1A
- FET Type :
- N-Channel
- Additional Feature :
- LOW THRESHOLD
- Maximum Operating Temperature :
- +150 °C
- Reach Compliance Code :
- Compliant
- Product Category :
- MOSFET
- Weight :
- 3.949996g
- Factory Lead Time :
- 19 Weeks
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- --
- Continuous Drain Current Id :
- 1.1
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Channel Mode :
- Depletion
- Number of Elements per Chip :
- 1
- Width :
- 6.1mm
- Brand :
- Microchip Technology / Atmel
- Pin Count :
- 3
- Series :
- --
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Power Dissipation :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 25V
- Surface Mount :
- yes
- Number of Terminals :
- 2
- Number of Pins :
- 3
- DS Breakdown Voltage-Min :
- 250 V
- Fall Time (Typ) :
- 20 ns
- Turn On Delay Time :
- 10 ns
- Package Type :
- DPAK (TO-252)
- Datasheets
- DN2625K4-G
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N-Channel Tape & Reel (TR) 3.5 Ω @ 1A, 0V ±20V 1000pF @ 25V 7.04nC @ 1.5V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
DN2625K4-G Overview
A device's maximum input capacitance is 1000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.Its maximum pulsed drain current is 3.3 A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 250 V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (0V) to reduce its overall power consumption.
DN2625K4-G Features
a continuous drain current (ID) of 1.1A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 10 ns
based on its rated peak drain current 3.3 A.
a 250V drain to source voltage (Vdss)
DN2625K4-G Applications
There are a lot of Microchip Technology
DN2625K4-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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