DN2470K4-G

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Mfr.Part #
DN2470K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 700V 170MA TO252
Stock
58,387
In Stock :
58,387

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 25V
Width :
6.1mm
Rds On (Max) @ Id, Vgs :
42 Ω @ 100mA, 0V
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
yes
JESD-30 Code :
R-PSSO-G2
Turn On Delay Time :
30 ns
Product Category :
MOSFET
Channel Type :
N
Base Part Number :
DN2470
Length :
6.73mm
Channel Mode :
Depletion
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
SMD/SMT
Maximum Operating Temperature :
+ 150 C
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Power Dissipation-Max :
2.5W Ta
Weight :
3.949996g
JESD-609 Code :
e3
Lead Free :
Lead Free
Terminal Position :
Single
Turn-Off Delay Time :
45 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
MSL :
MSL 1 - Unlimited
JEDEC-95 Code :
TO-252AA
Terminal Finish :
Matte Tin (Sn) - annealed
Base Product Number :
DN2470
Factory Lead Time :
14 Weeks
Power Dissipation-Max (Abs) :
2.5 W
Reach Compliance Code :
Compliant
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Product Type :
MOSFET
Current - Continuous Drain (Id) @ 25°C :
170mA Tj
Qualification :
-
Element Configuration :
Single
Case Connection :
DRAIN
Number of Pins :
3
Transistor Application :
SWITCHING
Rise Time :
45ns
Transistor Polarity :
N-Channel
Terminal Form :
Gull wing
Number of Elements :
1
Vgs(th) (Max) @ Id :
--
Manufacturer :
Microchip
FET Type :
N-Channel
Mounting Type :
Surface Mount
Number of Channels :
1
Height :
2.5146mm
Configuration :
Single
Drain to Source Breakdown Voltage :
700V
Published :
2013
Power Dissipation :
2.5W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
RoHS :
Details
FET Feature :
Depletion Mode
Drain to Source Voltage (Vdss) :
700V
Continuous Drain Current (ID) :
170mA
Number of Terminations :
2
Fall Time (Typ) :
60 ns
Number of Terminals :
2
Operating Mode :
Depletion Mode
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
42 Ω
Series :
--
DS Breakdown Voltage-Min :
700 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
0.5A
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
RoHS Status :
ROHS3 Compliant
Brand :
Microchip Technology / Atmel
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Type :
FET
Supplier Device Package :
TO-252, (D-Pak)
Transistor Type :
1 N-Channel
Polarity/Channel Type :
N-Channel
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Continuous Drain Current Id :
170
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
0V
Power Dissipation (Max) :
2.5W (Ta)
Datasheets
DN2470K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2470K4-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:DN2470, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Number of Channels:1, Number of Terminations:2, Type:FET, DN2470K4-G pinout, DN2470K4-G datasheet PDF, DN2470K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2470K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2470K4-G


N-Channel Tape & Reel (TR) 42 Ω @ 100mA, 0V ±20V 540pF @ 25V 700V TO-252-3, DPak (2 Leads + Tab), SC-63

DN2470K4-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 540pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 170mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 700V, and this device has a drainage-to-source breakdown voltage of 700VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 0.5A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 700 V.For this transistor to work, a voltage 700V is required between drain and source (Vdss).Using drive voltage (0V), this device contributes to a reduction in overall power consumption.

DN2470K4-G Features


a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 0.5A.
a 700V drain to source voltage (Vdss)


DN2470K4-G Applications


There are a lot of Microchip Technology
DN2470K4-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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