DN2450N8-G

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Mfr.Part #
DN2450N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 500V 230MA TO243AA
Stock
1,613
In Stock :
1,613

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Drain-source On Resistance-Max :
10 Ω
Terminal Position :
Single
Number of Pins :
3
Product Type :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
40
JESD-30 Code :
R-PSSO-F3
Mounting Type :
Surface Mount
Published :
2013
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
10 Ω @ 300mA, 0V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Style :
SMD/SMT
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
230mA Tj
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
--
Operating Mode :
Depletion Mode
Number of Terminations :
3
Case Connection :
DRAIN
Channel Type :
N
Number of Terminals :
3
JEDEC-95 Code :
TO-243AA
Pulsed Drain Current-Max (IDM) :
0.9A
Reach Compliance Code :
Compliant
Series :
--
FET Feature :
Depletion Mode
Peak Reflow Temperature (Cel) :
260
Product Status :
Active
Continuous Drain Current (ID) :
230mA
Transistor Polarity :
N-Channel
Drain Current-Max (Abs) (ID) :
0.23 A
ECCN Code :
EAR99
Power Dissipation (Max) :
1.6W (Ta)
Power Dissipation :
1.6W
Number of Elements :
1
Vgs (Max) :
±20V
Base Product Number :
DN2450
FET Type :
N-Channel
Terminal Form :
Flat
Power Dissipation-Max :
1.6W Ta
Factory Lead Time :
9 Weeks
RoHS :
Details
Manufacturer :
Microchip
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
0V
Brand :
Microchip Technology
Packaging :
Tape and Reel (TR)
Terminal Finish :
Matte Tin (Sn)
Drain to Source Breakdown Voltage :
500V
Configuration :
SINGLE WITH BUILT-IN DIODE
REACH SVHC :
No SVHC
Package / Case :
TO-243AA
Maximum Operating Temperature :
+ 150 C
Supplier Device Package :
TO-243AA (SOT-89)
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Additional Feature :
LOW THRESHOLD
Channel Mode :
Depletion
Power Dissipation-Max (Abs) :
1.6 W
Transistor Application :
SWITCHING
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Weight :
52.786812mg
Drain to Source Voltage (Vdss) :
500V
Package Shape :
RECTANGULAR
Mount :
Surface Mount
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Continuous Drain Current Id :
230
Lead Free :
Lead Free
Number of Channels :
1 Channel
Datasheets
DN2450N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2450N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-243AA, Number of Channels:1 Channel, DN2450N8-G pinout, DN2450N8-G datasheet PDF, DN2450N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2450N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2450N8-G


N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-243AA

DN2450N8-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 230mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.23 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 0.9A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (0V), this device helps reduce its overall power consumption.

DN2450N8-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 0.9A.
a 500V drain to source voltage (Vdss)


DN2450N8-G Applications


There are a lot of Microchip Technology
DN2450N8-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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