DN2450N8-G
- Mfr.Part #
- DN2450N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 230MA TO243AA
- Stock
- 1,613
- In Stock :
- 1,613
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 10 Ω
- Terminal Position :
- Single
- Number of Pins :
- 3
- Product Type :
- MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- R-PSSO-F3
- Mounting Type :
- Surface Mount
- Published :
- 2013
- Product Category :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 300mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- SMD/SMT
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- --
- Operating Mode :
- Depletion Mode
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Channel Type :
- N
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-243AA
- Pulsed Drain Current-Max (IDM) :
- 0.9A
- Reach Compliance Code :
- Compliant
- Series :
- --
- FET Feature :
- Depletion Mode
- Peak Reflow Temperature (Cel) :
- 260
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 230mA
- Transistor Polarity :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 0.23 A
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 1.6W (Ta)
- Power Dissipation :
- 1.6W
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Base Product Number :
- DN2450
- FET Type :
- N-Channel
- Terminal Form :
- Flat
- Power Dissipation-Max :
- 1.6W Ta
- Factory Lead Time :
- 9 Weeks
- RoHS :
- Details
- Manufacturer :
- Microchip
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Brand :
- Microchip Technology
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-243AA
- Maximum Operating Temperature :
- + 150 C
- Supplier Device Package :
- TO-243AA (SOT-89)
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- LOW THRESHOLD
- Channel Mode :
- Depletion
- Power Dissipation-Max (Abs) :
- 1.6 W
- Transistor Application :
- SWITCHING
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Weight :
- 52.786812mg
- Drain to Source Voltage (Vdss) :
- 500V
- Package Shape :
- RECTANGULAR
- Mount :
- Surface Mount
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Continuous Drain Current Id :
- 230
- Lead Free :
- Lead Free
- Number of Channels :
- 1 Channel
- Datasheets
- DN2450N8-G

N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-243AA
DN2450N8-G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 200pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 230mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.23 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 0.9A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (0V), this device helps reduce its overall power consumption.
DN2450N8-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 0.9A.
a 500V drain to source voltage (Vdss)
DN2450N8-G Applications
There are a lot of Microchip Technology
DN2450N8-G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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