DN2450K4-G

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Mfr.Part #
DN2450K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 350MA TO252
Stock
27
In Stock :
27

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current Id :
350
Power Dissipation (Max) :
2.5W (Ta)
Power Dissipation-Max :
2.5W Ta
Channel Mode :
Depletion
Manufacturer :
Microchip
Mounting Style :
SMD/SMT
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Rise Time :
20ns
JESD-30 Code :
R-PSSO-G2
Vgs(th) (Max) @ Id :
--
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
0V
Operating Mode :
Depletion Mode
Mount :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Number of Terminals :
2
Number of Pins :
3
Factory Lead Time :
10 Weeks
Transistor Polarity :
N-Channel
Terminal Position :
Single
Turn-Off Delay Time :
15 ns
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Weight :
3.949996g
Power Dissipation :
2.5W
RoHS :
Details
Rds On (Max) @ Id, Vgs :
10 Ω @ 300mA, 0V
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
Series :
--
Published :
2009
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
500V
Channel Type :
N
FET Type :
N-Channel
Contact Plating :
Tin
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
350mA
Pulsed Drain Current-Max (IDM) :
1A
Brand :
Microchip Technology
Number of Channels :
1 Channel
Product Status :
Active
Terminal Finish :
MATTE TIN
Fall Time (Typ) :
15 ns
Vgs (Max) :
±20V
Number of Terminations :
2
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Drain-source On Resistance-Max :
10 Ω
Product Category :
MOSFET
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-252AA
Power Dissipation-Max (Abs) :
2.5 W
Drain to Source Voltage (Vdss) :
500V
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
HTS Code :
8541.90.00.00
Case Connection :
DRAIN
Additional Feature :
LOW THRESHOLD
Current - Continuous Drain (Id) @ 25°C :
350mA Tj
Number of Elements :
1
Base Product Number :
DN2450
Drain Current-Max (Abs) (ID) :
0.35 A
Turn On Delay Time :
15 ns
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
FET Feature :
Depletion Mode
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2450K4-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, DN2450K4-G pinout, DN2450K4-G datasheet PDF, DN2450K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2450K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2450K4-G


N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

DN2450K4-G Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).

DN2450K4-G Features


a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 1A.
a 500V drain to source voltage (Vdss)


DN2450K4-G Applications


There are a lot of Microchip Technology
DN2450K4-G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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