DN2450K4-G
- Mfr.Part #
- DN2450K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 350MA TO252
- Stock
- 27
- In Stock :
- 27
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current Id :
- 350
- Power Dissipation (Max) :
- 2.5W (Ta)
- Power Dissipation-Max :
- 2.5W Ta
- Channel Mode :
- Depletion
- Manufacturer :
- Microchip
- Mounting Style :
- SMD/SMT
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Rise Time :
- 20ns
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- --
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Operating Mode :
- Depletion Mode
- Mount :
- Surface Mount
- Supplier Device Package :
- TO-252, (D-Pak)
- Number of Terminals :
- 2
- Number of Pins :
- 3
- Factory Lead Time :
- 10 Weeks
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 15 ns
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Weight :
- 3.949996g
- Power Dissipation :
- 2.5W
- RoHS :
- Details
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 300mA, 0V
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Series :
- --
- Published :
- 2009
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 500V
- Channel Type :
- N
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Reach Compliance Code :
- Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 350mA
- Pulsed Drain Current-Max (IDM) :
- 1A
- Brand :
- Microchip Technology
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Terminal Finish :
- MATTE TIN
- Fall Time (Typ) :
- 15 ns
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 10 Ω
- Product Category :
- MOSFET
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Power Dissipation-Max (Abs) :
- 2.5 W
- Drain to Source Voltage (Vdss) :
- 500V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.90.00.00
- Case Connection :
- DRAIN
- Additional Feature :
- LOW THRESHOLD
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- Number of Elements :
- 1
- Base Product Number :
- DN2450
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- FET Feature :
- Depletion Mode
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- DN2450K4-G
DN2450K4-G Documents
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N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
DN2450K4-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).
DN2450K4-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 1A.
a 500V drain to source voltage (Vdss)
DN2450K4-G Applications
There are a lot of Microchip Technology
DN2450K4-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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