DN2450K4-G
- Mfr.Part #
- DN2450K4-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 350MA TO252
- Stock
- 27
- In Stock :
- 27
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.5W Ta
- RoHS :
- Details
- Brand :
- Microchip Technology
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Reach Compliance Code :
- Compliant
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Manufacturer :
- Microchip
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Base Product Number :
- DN2450
- Fall Time (Typ) :
- 15 ns
- Pulsed Drain Current-Max (IDM) :
- 1A
- Vgs(th) (Max) @ Id :
- --
- Continuous Drain Current (ID) :
- 350mA
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-252AA
- Minimum Operating Temperature :
- - 55 C
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOW THRESHOLD
- Drain to Source Breakdown Voltage :
- 500V
- Number of Pins :
- 3
- Published :
- 2009
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- Case Connection :
- DRAIN
- Series :
- --
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- MATTE TIN
- Number of Terminals :
- 2
- Weight :
- 3.949996g
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 300mA, 0V
- Rise Time :
- 20ns
- Current - Continuous Drain (Id) @ 25°C :
- 350mA Tj
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 10 Ω
- Turn-Off Delay Time :
- 15 ns
- HTS Code :
- 8541.90.00.00
- REACH SVHC :
- No SVHC
- Channel Type :
- N
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- Depletion Mode
- Supplier Device Package :
- TO-252, (D-Pak)
- Power Dissipation :
- 2.5W
- Product Type :
- MOSFET
- Continuous Drain Current Id :
- 350
- Product Category :
- MOSFET
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 10 Weeks
- Transistor Application :
- SWITCHING
- Channel Mode :
- Depletion
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- SMD/SMT
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 2.5W (Ta)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- FET Feature :
- Depletion Mode
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Surface Mount :
- yes
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Power Dissipation-Max (Abs) :
- 2.5 W
- Package Shape :
- RECTANGULAR
- Datasheets
- DN2450K4-G
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N-Channel Tape & Reel (TR) 10 Ω @ 300mA, 0V ±20V 200pF @ 25V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
DN2450K4-G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350mA amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (0V).
DN2450K4-G Features
a continuous drain current (ID) of 350mA
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 1A.
a 500V drain to source voltage (Vdss)
DN2450K4-G Applications
There are a lot of Microchip Technology
DN2450K4-G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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