DMTH8012LPSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

46.8nC @ 10V

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Factory Lead Time :

22 Weeks

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

80V

Avalanche Energy Rating (Eas) :

10.2 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2051pF @ 40V

JESD-609 Code :

e3

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

17m Ω @ 12A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2016

JESD-30 Code :

R-PDSO-F5

Additional Feature :

High Reliability

ECCN Code :

EAR99

Power Dissipation-Max :

2.6W Ta 136W Tc

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

10A

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A Ta 72A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.017Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Continuous Drain Current (ID) :

72A

Series :

Automotive, AEC-Q101

Terminal Form :

Flat

Number of Elements :

1

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA