DMTH8012LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rds On (Max) @ Id, Vgs :

16m Ω @ 12A, 10V

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

80V

Drain to Source Voltage (Vdss) :

80V

Avalanche Energy Rating (Eas) :

147 mJ

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

80A

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2015

FET Type :

N-Channel

Power Dissipation-Max :

2.6W Ta

Number of Terminations :

2

Mounting Type :

Surface Mount

Factory Lead Time :

23 Weeks

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1949pF @ 40V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Elements :

1

Drain-source On Resistance-Max :

0.016Ohm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Additional Feature :

High Reliability

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Terminal Position :

Single