DMTH6010SK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Continuous Drain Current (ID) :

70A

Input Capacitance (Ciss) (Max) @ Vds :

1940pF @ 30V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

16.3A Ta 70A Tc

JESD-609 Code :

e3

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.008Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

Gull wing

Published :

2015

Factory Lead Time :

23 Weeks

Number of Terminations :

2

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

80A

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

16.3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

36.3nC @ 10V

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

3.1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

27.7 mJ