DMTH6005LK3Q-13
- Mfr.Part #
- DMTH6005LK3Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A TO252-2
- Stock
- 4,862
- In Stock :
- 4,862
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 50A, 10V
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Published :
- 2016
- Continuous Drain Current (ID) :
- 90A
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 23 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2962pF @ 30V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 98 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 47.1nC @ 10V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Pulsed Drain Current-Max (IDM) :
- 150A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 2.1W Ta 100W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Voltage (Vdss) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Additional Feature :
- High Reliability
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0056Ohm
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 60V
- Terminal Position :
- Single
- Datasheets
- DMTH6005LK3Q-13

N-Channel Tape & Reel (TR) 5.6m Ω @ 50A, 10V ±20V 2962pF @ 30V 47.1nC @ 10V 60V TO-252-5, DPak (4 Leads + Tab), TO-252AD
DMTH6005LK3Q-13 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 98 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2962pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).Peak drain current is 150A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMTH6005LK3Q-13 Features
the avalanche energy rating (Eas) is 98 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 150A.
a 60V drain to source voltage (Vdss)
DMTH6005LK3Q-13 Applications
There are a lot of Diodes Incorporated
DMTH6005LK3Q-13 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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