DMTH6004SK3Q-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

95.4nC @ 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

23 Weeks

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

200 mJ

Power Dissipation-Max :

3.9W Ta 180W Tc

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

60V

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0038Ohm

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4556pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 90A, 10V

Pulsed Drain Current-Max (IDM) :

150A