DMTH6002LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain Current-Max (Abs) (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

6555pF @ 30V

Number of Terminations :

5

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Power Dissipation-Max :

167W

DS Breakdown Voltage-Min :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.003Ohm

Reference Standard :

AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Dual

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

130.8nC @ 10V

Rds On (Max) @ Id, Vgs :

2m Ω @ 50A, 10V

Avalanche Energy Rating (Eas) :

294 mJ