DMTH43M8LPSQ-13

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Mfr.Part #
DMTH43M8LPSQ-13
Manufacturer
Diodes Incorporated
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 22A PWRDI5060
Stock
11,880
In Stock :
11,880

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
not_compliant
Factory Lead Time :
18 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
3.3m Ω @ 20A, 10V
Height :
1.15mm
Gate to Source Voltage (Vgs) :
20V
Manufacturer Package Identifier :
PowerDI5060-8
ECCN Code :
EAR99
Power Dissipation-Max :
2.7W Ta
Series :
Automotive, AEC-Q101
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Drain to Source Breakdown Voltage :
40V
Input Capacitance (Ciss) (Max) @ Vds :
3.367nF @ 20V
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
22A Ta 100A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
22A
FET Type :
N-Channel
Max Junction Temperature (Tj) :
175°C
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Package / Case :
8-PowerTDFN
Power Dissipation :
2.7W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Number of Channels :
1
Turn On Delay Time :
5.2 ns
Vgs (Max) :
±20V
Turn-Off Delay Time :
23.5 ns
Datasheets
DMTH43M8LPSQ-13
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMTH43M8LPSQ-13 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Channels:1, DMTH43M8LPSQ-13 pinout, DMTH43M8LPSQ-13 datasheet PDF, DMTH43M8LPSQ-13 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMTH43M8LPSQ-13 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMTH43M8LPSQ-13


N-Channel Tape & Reel (TR) 3.3m Ω @ 20A, 10V ±20V 3.367nF @ 20V 49nC @ 10V 8-PowerTDFN

DMTH43M8LPSQ-13 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3.367nF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

DMTH43M8LPSQ-13 Features


a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 23.5 ns


DMTH43M8LPSQ-13 Applications


There are a lot of Diodes Incorporated
DMTH43M8LPSQ-13 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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