DMTH4004SK3Q-13
- Mfr.Part #
- DMTH4004SK3Q-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO252
- Stock
- 17,671
- In Stock :
- 17,671
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 160 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Published :
- 2016
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 3.9W Ta 180W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 68.6nC @ 10V
- Continuous Drain Current (ID) :
- 100A
- Factory Lead Time :
- 23 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 160A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Package / Case :
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 90A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Reach Compliance Code :
- not_compliant
- DS Breakdown Voltage-Min :
- 40V
- Drain to Source Voltage (Vdss) :
- 40V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4305pF @ 25V
- Drain-source On Resistance-Max :
- 0.0032Ohm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- DMTH4004SK3Q-13

N-Channel Tape & Reel (TR) 3.2m Ω @ 90A, 10V ±20V 4305pF @ 25V 68.6nC @ 10V 40V TO-252-5, DPak (4 Leads + Tab), TO-252AD
DMTH4004SK3Q-13 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 160 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4305pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Peak drain current is 160A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
DMTH4004SK3Q-13 Features
the avalanche energy rating (Eas) is 160 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 160A.
a 40V drain to source voltage (Vdss)
DMTH4004SK3Q-13 Applications
There are a lot of Diodes Incorporated
DMTH4004SK3Q-13 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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