DMTH3002LPS-13
- Mfr.Part #
- DMTH3002LPS-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 100A PWRDI5060-8
- Stock
- 3,087
- In Stock :
- 3,087
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±16V
- Number of Terminations :
- 5
- Terminal Form :
- Flat
- Drain-source On Resistance-Max :
- 0.0025Ohm
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-F5
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 77nC @ 10V
- Mount :
- Surface Mount
- Published :
- 2016
- Series :
- Automotive, AEC-Q101
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.2W Ta 136W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 25A, 10V
- Pulsed Drain Current-Max (IDM) :
- 150A
- Terminal Position :
- Dual
- Continuous Drain Current (ID) :
- 100A
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 15V
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 30V
- Factory Lead Time :
- 24 Weeks
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- DMTH3002LPS-13

N-Channel Tape & Reel (TR) 1.6m Ω @ 25A, 10V ±16V 5000pF @ 15V 77nC @ 10V 30V 8-PowerTDFN
DMTH3002LPS-13 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5000pF @ 15V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 150A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMTH3002LPS-13 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 100A
based on its rated peak drain current 150A.
a 30V drain to source voltage (Vdss)
DMTH3002LPS-13 Applications
There are a lot of Diodes Incorporated
DMTH3002LPS-13 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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