DMTH10H030LK3-13
- Mfr.Part #
- DMTH10H030LK3-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 28A TO252
- Stock
- 35,693
- In Stock :
- 35,693
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Factory Lead Time :
- 27 Weeks
- Package / Case :
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Terminal Position :
- Single
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 20A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Published :
- 2016
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 85 mJ
- DS Breakdown Voltage-Min :
- 100V
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 33.3nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.045Ohm
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 28A
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1871pF @ 50V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.1W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Datasheets
- DMTH10H030LK3-13

N-Channel Tape & Reel (TR) 30m Ω @ 20A, 10V ±20V 1871pF @ 50V 33.3nC @ 10V 100V TO-252-5, DPak (4 Leads + Tab), TO-252AD
DMTH10H030LK3-13 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 85 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1871pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 28A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 50A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
DMTH10H030LK3-13 Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 28A
based on its rated peak drain current 50A.
a 100V drain to source voltage (Vdss)
DMTH10H030LK3-13 Applications
There are a lot of Diodes Incorporated
DMTH10H030LK3-13 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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