DMT8012LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

9A

Terminal Form :

Flat

Terminal Position :

Dual

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Additional Feature :

High Reliability

FET Type :

N-Channel

Number of Pins :

8

Power Dissipation-Max :

2.1W Ta 113W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

80V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

65A

Current - Continuous Drain (Id) @ 25°C :

9A Ta 65A Tc

Rds On (Max) @ Id, Vgs :

17m Ω @ 12A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101

Published :

2015

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.017Ohm

Factory Lead Time :

22 Weeks

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1949pF @ 40V

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

10.2 mJ

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED