DMT8012LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

10.2 mJ

Power Dissipation-Max :

2.1W Ta 113W Tc

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Continuous Drain Current (ID) :

65A

Drain Current-Max (Abs) (ID) :

9A

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

1949pF @ 40V

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.017Ohm

Current - Continuous Drain (Id) @ 25°C :

9A Ta 65A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

22 Weeks

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

17m Ω @ 12A, 10V

Terminal Form :

Flat

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

80V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Case Connection :

DRAIN

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

FET Type :

N-Channel