DMT8012LFG-7
- Mfr.Part #
- DMT8012LFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V PWRDI3333
- Stock
- 5,685
- In Stock :
- 5,685
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 16.5 ns
- Package / Case :
- 8-PowerVDFN
- Turn On Delay Time :
- 4.9 ns
- Drain to Source Breakdown Voltage :
- 80V
- Continuous Drain Current (ID) :
- 35A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rise Time :
- 3.8ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Capacitance :
- 1.949nF
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 12A, 10V
- Mounting Type :
- Surface Mount
- Weight :
- 72.007789mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.2W Ta 30W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1949pF @ 40V
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta 35A Tc
- Element Configuration :
- Single
- Factory Lead Time :
- 23 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Number of Pins :
- 8
- Fall Time (Typ) :
- 3.5 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Datasheets
- DMT8012LFG-7

N-Channel Tape & Reel (TR) 16m Ω @ 12A, 10V ±20V 1949pF @ 40V 34nC @ 10V 8-PowerVDFN
DMT8012LFG-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1949pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 16.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
DMT8012LFG-7 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 16.5 ns
DMT8012LFG-7 Applications
There are a lot of Diodes Incorporated
DMT8012LFG-7 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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