DMT8012LFG-7

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Mfr.Part #
DMT8012LFG-7
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 80V PWRDI3333
Stock
5,685
In Stock :
5,685

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Turn-Off Delay Time :
16.5 ns
Package / Case :
8-PowerVDFN
Turn On Delay Time :
4.9 ns
Drain to Source Breakdown Voltage :
80V
Continuous Drain Current (ID) :
35A
Vgs(th) (Max) @ Id :
3V @ 250µA
Rise Time :
3.8ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Capacitance :
1.949nF
Vgs (Max) :
±20V
Number of Channels :
1
Published :
2014
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
16m Ω @ 12A, 10V
Mounting Type :
Surface Mount
Weight :
72.007789mg
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
2.2W Ta 30W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1949pF @ 40V
Current - Continuous Drain (Id) @ 25°C :
9.5A Ta 35A Tc
Element Configuration :
Single
Factory Lead Time :
23 Weeks
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Number of Pins :
8
Fall Time (Typ) :
3.5 ns
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Gate to Source Voltage (Vgs) :
20V
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
Mount :
Surface Mount
FET Type :
N-Channel
Datasheets
DMT8012LFG-7
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT8012LFG-7 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerVDFN, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Number of Pins:8, DMT8012LFG-7 pinout, DMT8012LFG-7 datasheet PDF, DMT8012LFG-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMT8012LFG-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMT8012LFG-7


N-Channel Tape & Reel (TR) 16m Ω @ 12A, 10V ±20V 1949pF @ 40V 34nC @ 10V 8-PowerVDFN

DMT8012LFG-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1949pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 16.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (6V 10V).

DMT8012LFG-7 Features


a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 16.5 ns


DMT8012LFG-7 Applications


There are a lot of Diodes Incorporated
DMT8012LFG-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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