DMT34M1LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

22 Weeks

Package / Case :

8-PowerTDFN

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

250A

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Terminal Form :

Flat

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2242pF @ 15V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

21A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

42W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0052Ohm

Avalanche Energy Rating (Eas) :

78 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

FET Type :

N-Channel

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual