DMT3006LDV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature (Max) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.01Ohm

Drain Current-Max (Abs) (ID) :

25A

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

1.8W

Terminal Form :

Flat

Factory Lead Time :

22 Weeks

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Temperature (Min) :

-55°C

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Number of Elements :

2

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PDSO-F6

Surface Mount :

yes