DMT3006LDV-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PDSO-F6

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.01Ohm

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

25A

Operating Temperature (Max) :

150°C

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Terminal Form :

Flat

Factory Lead Time :

22 Weeks

Operating Temperature (Min) :

-55°C

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

1.8W