DMT32M5LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

19 Weeks

Vgs(th) (Max) @ Id :

3V @ 1mA

Number of Terminations :

5

DS Breakdown Voltage-Min :

30V

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

140 mJ

Drain Current-Max (Abs) (ID) :

150A

Input Capacitance (Ciss) (Max) @ Vds :

3944pF @ 25V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Power Dissipation-Max :

100W Tc

Case Connection :

DRAIN

Surface Mount :

yes

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-F5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

350A

Terminal Position :

Dual

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.003Ohm