DMP21D0UFB4-7R

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

P-Channel

DS Breakdown Voltage-Min :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

Package :

Tape and Reel (TR)

Technology :

Si

Feedback Cap-Max (Crss) :

10.7 pF

Vgs (Max) :

±8V

Subcategory :

MOSFETs

Series :

-

Minimum Operating Temperature :

- 55 C

Additional Feature :

FAST SWITCHING, LOW THRESHOLD

Vgs(th) (Max) @ Id :

1V @ 250μA

Polarity/Channel Type :

P-Channel

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20 V

Transistor Element Material :

SILICON

Power Dissipation :

990

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 150 C

Current - Continuous Drain (Id) @ 25°C :

770mA (Ta)

Supplier Device Package :

X2-DFN1006-3

Package Shape :

RECTANGULAR

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Case Connection :

DRAIN

FET Feature :

-

Drain-source On Resistance-Max :

0.495 Ω

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Form :

NO LEAD

FET Type :

P-Channel

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

76.5 pF @ 10 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

MouseReel

Power Dissipation Ambient-Max :

0.099 W

Terminal Position :

BOTTOM

Number of Elements :

1

JESD-609 Code :

e4

Continuous Drain Current Id :

1.17

Power Dissipation (Max) :

430mW (Ta)

Package / Case :

3-XFDFN

Product Type :

MOSFET

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

1.5 nC @ 8 V

Brand :

Diodes Incorporated

Rds On (Max) @ Id, Vgs :

495mOhm @ 400mA, 4.5V

JESD-30 Code :

R-PBCC-N3

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

Product Category :

MOSFET

Mounting Style :

SMD/SMT