DMP2100U-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

5 Weeks

Vgs (Max) :

±10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Turn On Delay Time :

80 ns

Turn-Off Delay Time :

688 ns

Power Dissipation :

1.3W

Drain to Source Breakdown Voltage :

-20V

JESD-609 Code :

e3

Published :

2012

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Width :

1.4mm

Height :

1.1mm

Power Dissipation-Max :

800mW Ta

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Continuous Drain Current (ID) :

4.3A

Terminal Position :

Dual

Fall Time (Typ) :

423 ns

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Input Capacitance (Ciss) (Max) @ Vds :

216pF @ 15V

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

3

Number of Pins :

3

Threshold Voltage :

-1.4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

38m Ω @ 3.5A, 10V

Number of Channels :

1

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Rise Time :

155ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 10V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

9.1nC @ 4.5V

Weight :

7.994566mg

FET Type :

P-Channel

Radiation Hardening :

No

Transistor Application :

SWITCHING