DMP2070UCB6-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

70m Ω @ 1A, 4.5V

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Terminal Form :

Ball

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.15Ohm

Rise Time :

14ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Package / Case :

6-UFBGA, WLBGA

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

7 Weeks

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

32 ns

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Transistor Element Material :

SILICON

Published :

2011

Continuous Drain Current (ID) :

2.5A

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

920mW Ta

Mounting Type :

Surface Mount

Width :

1.5mm

Height :

620μm

Operating Mode :

ENHANCEMENT MODE

Length :

1mm

Drain Current-Max (Abs) (ID) :

3.5A

Turn-Off Delay Time :

42.6 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Drain to Source Breakdown Voltage :

20V

JESD-609 Code :

e1

Vgs (Max) :

±8V

Turn On Delay Time :

7.3 ns

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC