DMP2066LDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation :

1.25W

Length :

3mm

Mount :

Surface Mount

Power Dissipation-Max :

1.25W Ta

DS Breakdown Voltage-Min :

20V

Published :

2011

Package / Case :

SOT-23-6

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.6A, 4.5V

Pin Count :

6

Width :

1.6mm

Continuous Drain Current (ID) :

4.6A

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

960mV

Number of Elements :

1

JESD-609 Code :

e3

Vgs (Max) :

±12V

Number of Channels :

1

Number of Pins :

6

Height :

1.1mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

4.4 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 15V

Terminal Form :

Gull wing

Terminal Position :

Dual

Resistance :

40mOhm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

9.9 ns

Drain to Source Voltage (Vdss) :

20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Mounting Type :

Surface Mount

FET Type :

P-Channel

Turn-Off Delay Time :

28 ns

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Lead Free :

Lead Free

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

9.9ns

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 4.5V